Efficient optical modulation along with high data rate is a prerequisite for the realization of high-performance optical modulator. Optical modulation in silicon with high data-rate and high modulation efficiency is proposed by a laterally separated vertical p-n junction. Two independent but synchronized p-n junctions that supports the common optical mode are created by forming a slot waveguide structure. It provides a prominent way to enhance the light-material interaction necessarily to achieve low $\text{V}_{\pi }\text{L}$ along with the low RC time constant which is crucial for the high-speed operation. The proposed device shows a high modulation efficiency of 0.74 V-cm for 1.2 mm long device. The calculated intrinsic 3-dB bandwidth reaches up to ≈ 58 GHz at a reverse bias of 6 V. We show high speed operation up to 25 Gbit/s for the device length of $600~\mu \text{m}$ with a simple lumped electrode configuration. The Traveling-wave electrodes as a coplanar waveguide is employed to further improve the speed performance of the device. By taking the advantage of excellent velocity matching between optical group index and RF effective index, high data rate performance up to 100 Gbit/s is obtained with an extinction ratio of 2.4 dB. The proposed device opens new avenues for high speed optical interconnect on an SOI platform.

中文翻译：

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硅基横向分裂垂直 pn 结中具有高数据速率的高效光调制

高效的光调制和高数据速率是实现高性能光调制器的先决条件。通过横向分离的垂直 pn 结提出了具有高数据速率和高调制效率的硅光调制。两个独立但同步的 pn 结支持共光模，是通过形成狭缝波导结构而产生的。它提供了一种突出的方法来增强光与材料的相互作用，以实现低 $\text{V}_{\pi }\text{L}$ 以及对高速操作至关重要的低 RC 时间常数。所提出的器件对于 1.2 mm 长的器件显示出 0.74 V-cm 的高调制效率。计算出的固有 3-dB 带宽在 6V 反向偏置时高达 ≈ 58 GHz。我们使用简单的集总电极配置展示了高达 25 Gbit/s 的高速运行，设备长度为 $600~\mu\text{m}$。采用行波电极作为共面波导进一步提高了器件的速度性能。利用光群指数和射频有效指数之间良好的速度匹配优势，以2.4dB的消光比获得高达100Gbit/s的高数据速率性能。所提出的器件为 SOI 平台上的高速光互连开辟了新的途径。以 2.4 dB 的消光比获得高达 100 Gbit/s 的高数据速率性能。所提出的器件为 SOI 平台上的高速光互连开辟了新的途径。以 2.4 dB 的消光比获得高达 100 Gbit/s 的高数据速率性能。所提出的器件为 SOI 平台上的高速光互连开辟了新的途径。