In this paper, we propose a new carrier depletion-type hybrid III-V/Si optical phase shifter using a n-III-V/p-Si hetero-junction, which can be fabricated with direct epitaxial growth of III-V semiconductors on Si. We numerically analyzed the performance of the III-V/Si hybrid optical phase shifter by comparing the performance in reverse bias operation with that of pure Si or III-V p-n optical phase shifters. The hybrid III-V/Si optical phase shifter showed improved modulation efficiency and lower optical loss compared to pure Si and III-V p-n optical phase shifters, owing to the large electron-induced refractive index change of III-V compound semiconductors, while avoiding the large hole-induced optical loss of III-V compound semiconductor. The simulation study suggests the feasibility of a very low voltage-length product $(V_{ {\pi }} L)$ of $0.07~\text {V}\cdot \text {cm}$ , a low insertion loss ( $\alpha $ ) of 16 dB/cm, and a very low $\alpha ~V_{ {\pi }}L$ product close to 1 $\text {V}\cdot \text {dB}$ at $1.31~\mu $ m, which is 10 $\times$ lower than for Si p-n optical phase shifters.

中文翻译：

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单片III-V/Si V型槽载流子耗尽光移相器的仿真研究

在本文中，我们提出了一种新的载流子耗尽型混合 III-V/Si 光学移相器，该移相器使用 n-III-V/p-Si 异质结，可以通过 III-V 半导体的直接外延生长来制造西。我们通过比较反向偏置操作中的性能与纯 Si 或 III-V pn 光学移相器的性能，对 III-V/Si 混合光学移相器的性能进行了数值分析。与纯 Si 和 III-V pn 光学移相器相比，混合 III-V/Si 光学移相器显示出更高的调制效率和更低的光损耗，这是由于 III-V 化合物半导体的大电子诱导折射率变化，同时避免III-V族化合物半导体的大空穴诱导光损耗。模拟研究表明极低电压长度产品的可行性 $(V_{ {\pi }} L)$ 的 $0.07~\text {V}\cdot \text {cm}$ , 低插入损耗 ( $\alpha $ ) 为 16 dB/cm，并且非常低 $\alpha ~V_{ {\pi }}L$ 产品接近 1 $\text {V}\cdot \text {dB}$ 在 $1.31~\mu $ 米，即 10 $\times$ 低于 Si pn 光学移相器。