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Single-electron pumping in a ZnO single-nanobelt quantum dot transistor
Science China Physics, Mechanics & Astronomy ( IF 6.4 ) Pub Date : 2020-02-18 , DOI: 10.1007/s11433-019-1494-4
Hassan Ali , Jing Tang , Kai Peng , SiBai Sun , Attia Falak , FeiLong Song , ShiYao Wu , ChenJiang Qian , Meng Wang , XiTian Zhang , Muhammad Aftab Rafiq , XiuLai Xu

Diluted magnetic semiconductors (DMSs) have traditionally been employed to implement spin-based quantum computing and quantum information processing. However, their low Curie temperature is a major hurdle in their use in this field, which creates the necessity for wide bandgap DMSs operating at room temperature. In view of this, a single-electron transistor (SET) with a global back-gate was built using a wide bandgap ZnO nanobelt (NB). Clear Coulomb oscillations were observed at 4.2 K. The periodicity of the Coulomb diamonds indicates that the Coulomb oscillations arise from single quantum dots of uniform size, whereas quasi-periodic Coulomb diamonds correspond to the contribution of multi-dots present in the ZnO NB. By applying an AC signal to the global back-gate across a Coulomb peak with varying frequencies, single-electron pumping was observed; the increase in current was equal to the production of electron charge and frequency. The current accuracy of about 1% for both single- and double-electron pumping was achieved at a high frequency of 25 MHz. This accurate single-electron pumping makes the ZnO NB SET suitable for single-spin injection and detection, which has great potential for applications in quantum information technology.

中文翻译:

ZnO单纳米粒子量子点晶体管中的单电子泵浦

稀释磁半导体(DMS)传统上已用于实现基于自旋的量子计算和量子信息处理。但是,它们的居里温度低是在该领域中使用它们的主要障碍,这为在室温下运行的宽带隙DMS提供了必要。鉴于此,使用宽带隙ZnO纳米带(NB)构建了具有全局背栅的单电子晶体管(SET)。在4.2 K处观察到清晰的库仑振荡。库仑钻石的周期性表明库仑振荡源自大小均一的单个量子点,而准周期库仑钻石对应于ZnO NB中存在的多点。通过跨频率变化的库​​仑峰向全局背栅施加交流信号,观察到单电子泵浦;电流的增加等于电子电荷和频率的产生。在25 MHz的高频下,单电子和双电子泵浦的电流精度约为1%。这种精确的单电子泵浦使得ZnO NB SET适用于单旋注入和检测,在量子信息技术中具有巨大的应用潜力。
更新日期:2020-02-18
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