Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier at the contacts because of the strong Fermi-level pinning at the metal-semiconductor interface. Here, we demonstrate that 2D metallic Mo 1− x W x Te 2 alloy, bonded to the 2D semiconductor channel MoTe 2 via van der Waals (vdW) force, can alleviate the Fermi-level pinning at the contacts. By using asymmetric contacts consisting of low work function Ti and high work function Mo 1− x W x Te 2 alloy, ambipolar transistors were created, showing superior transport for both electrons and holes. The MoTe 2 transistor with asymmetric contacts is unidirectional and shows prominent rectifying behavior. Moreover, this asymmetric contact scheme breaks the mirror symmetry of the built-in potential profile within...

中文翻译：

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Van der Waals用于多功能设备的金属合金触点

二维（2D）半导体在电子和光电应用中显示出巨大潜力。然而，由于在金属-半导体界面处的强费米能级钉扎，其接触受到较大的肖特基势垒的限制。在这里，我们证明了通过范德华力（vdW）结合到2D半导体通道MoTe 2的2D金属Mo 1-x W x Te 2合金可以减轻触点的费米能级钉扎。通过使用由低功函数Ti和高功函数Mo 1-x W x Te 2合金组成的非对称接触，产生了双极晶体管，显示出对电子和空穴的出色传输。具有不对称触点的MoTe 2晶体管是单向的，并显示出突出的整流行为。此外，