Atomically thin Van der Waals solids that exhibit direct band gap in their few layer form can substantially impact the field of two dimensional (2D) materials based electronic devices and related applications. Here we report on electronic charge transport behavior of multi layer n -type InSe field-effect transistor (FET) devices fabricated on SiO 2 /Si substrate with seven different channel thicknesses, t > 20 nm, well within its direct band gap regime. Through gate dependent conductivity measurements over a wide range of temperatures ( T ; 20 K < T < 310 K), we show that, irrespective of the channel thickness, carrier transport in these materials occurs via Arrhenius-type activated process above a certain characteristic temperature ( T * ), whereas for temperatures T < T * conduction occurs via variable range hopping (VRH) mechanism consistent with Mott’s 2D VRH formalism, manifesting t...

中文翻译：

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沟道厚度对多层硒化铟（InSe）场效应晶体管的电荷输运行为的影响

原子稀薄的范德华固体在其很少的层形式中显示出直接的带隙会极大地影响基于二维（2D）材料的电子设备和相关应用的领域。在这里，我们报告了在SiO 2 / Si衬底上制造的多层n型InSe场效应晶体管（FET）器件的电子电荷传输行为，该衬底具有7种不同的沟道厚度，t> 20 nm，完全在其直接带隙范围内。通过在很宽的温度范围内（T; 20 K <T <310 K）进行与栅极相关的电导率测量，我们表明，不管沟道厚度如何，这些材料中的载流子传输都是通过在特定特征温度以上的Arrhenius型活化过程进行的。 （T *），而对于温度T <