Abstract Surface leakage in long-wave infrared InAs/GaSb superlattice detectors is closely related to the state of Sb on the sidewall surface. The presence of free Sb on the sidewall surface after wet etching and GaSb after dry etching at 90 °C can considerably deteriorate the electrical performance of the detector. By using a Cl2/N2 inductively coupled plasma dry etching process at 170 °C, the formation of free Sb or GaSb on the sidewall surface of the sample was prevented, resulting in a low dark current density. The 640 × 512 focal plane array which mesa sidewalls were passivated with silicon nitride film had a cut-off wavelength of 12 μm. The dark current density measured on a single pixel was 1.3 × 10−5 A/cm2 at the bias of −0.05 V and the corresponding resistance-area product at zero resistance (R0A) was 830 Ω∙cm2. The mean peak detectivity (D*) was measured to be 6.6 × 1010 cm Hz1/2/W and the noise equivalent differential temperature as low as 17.2 mK at 60 K.

中文翻译：

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蚀刻工艺对长波红外InAs/GaSb超晶格探测器表面暗电流的影响

摘要 长波红外InAs/GaSb超晶格探测器的表面泄漏与侧壁表面Sb的状态密切相关。湿法蚀刻后侧壁表面存在游离 Sb 和 90°C 干法蚀刻后存在 GaSb 会显着降低探测器的电性能。通过在 170 °C 下使用 Cl2/N2 电感耦合等离子体干蚀刻工艺，防止了样品侧壁表面上游离 Sb 或 GaSb 的形成，从而导致低暗电流密度。640 × 512 焦平面阵列，其台面侧壁用氮化硅薄膜钝化，截止波长为 12 μm。在 -0.05 V 的偏压下，在单个像素上测量的暗电流密度为 1.3 × 10−5 A/cm2，零电阻时的相应电阻面积积 (R0A) 为 830 Ω∙cm2。