Abstract An investigation of the optical and electronic properties of amorphous silicon dioxide by means of a combination of reflection electron energy loss spectroscopy (REELS) and secondary electron–electron energy loss coincidence spectroscopy (SE2ELCS) is presented. Optical constants for a-SiO2 were extracted from the REELS measurements and a band gap of 9.1 eV was determined by deconvolution of multiple scattering and fitting the differential inverse inelastic mean free path with a model energy loss function (ELF). The coincidence measurements allow to determine the surface barrier height and the electron affinity was determined to be 0.8 eV. Furthermore, the coincidence measurements show that even in the case of an insulator, plasmon decay is the main mechanism for generation of secondary electrons.

中文翻译：

---

通过单电子和双电子光谱​​测定非晶二氧化硅的光学和电子特性

摘要 结合反射电子能量损失谱 (REELS) 和二次电子-电子能量损失符合谱 (SE2ELCS) 对非晶二氧化硅的光学和电子特性进行了研究。a-SiO2 的光学常数是从 REELS 测量中提取的，9.1 eV 的带隙是通过多次散射的去卷积和用模型能量损失函数 (ELF) 拟合微分逆非弹性平均自由程来确定的。重合测量允许确定表面势垒高度，并且电子亲和势被确定为 0.8 eV。此外，重合测量表明，即使在绝缘体的情况下，等离子体衰变也是产生二次电子的主要机制。