This paper describes an investigation of the linewidth enhancement factor α_H in a semiconductor quantum-dot laser. Results are presented for active region parameters and laser configurations important for minimizing α_H. In particular, the feasibility of lasing at the gain peak with α_H = 0 is explored. The study uses a many-body theory with dephasing effects from carrier scattering treated at the level of quantum-kinetic equations. InAs quantum-dot lasers with different p-modulation doping densities are fabricated and measured to verify the calculated criteria on laser cavity design and epitaxial growth conditions.

中文翻译：

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线宽增强因子αH= 0时在增益峰值处的量子点激射

本文描述了线宽增强因子进行调查α _ħ在半导体量子点激光器。结果表示为有源区的参数和激光器配置用于最小化重要α _ħ。特别地，在与增益峰值激射的可行性α _ħ = 0进行了探索。这项研究使用了多体理论，其中载流子散射在量子动力学方程的水平上具有相移效应。制作并测量了具有不同p调制掺杂密度的InAs量子点激光器，以验证计算出的关于激光腔设计和外延生长条件的标准。