Abstract

Effects of Co interlayer and 200 °C post-annealing treatment on interfacial adhesion energy of SiN_x/Cu structure were systematically investigated. Initial interfacial adhesion energy of SiN_x/Cu structure measured by double cantilever beam test was 0.92 J/m². The interfacial adhesion energy increased to 2.94 J/m² with Co interlayer between SiN_x and Cu films. After post-annealing treatment at 200 °C for 500 h, the interfacial adhesion energy of SiN_x/Co/Cu structure decreased to 0.95 J/m². X-ray photoelectron spectroscopy analysis revealed that the interfacial adhesion energy increased for SiN_x/Co/Cu thin films due to CoSi₂ reaction layer at SiN_x/Co interface, but sharply decreased during post-annealing treatment by SiO₂ formation at SiN_x/Co interface.

Graphic abstract

摘要

系统地研究了Co中间层和200°C退火后处理对SiN _x / Cu结构界面粘合能的影响。通过双悬臂梁测试测得的SiN _x / Cu结构的初始界面粘合能为0.92 J / m ²。在SiN _x和Cu膜之间存在Co夹层时，界面粘附能增加到2.94 J / m ²。在200°C下退火500 h后，SiN _x / Co / Cu结构的界面结合能降至0.95 J / m ²。X射线光电子能谱分析表明，SiN _x / Co / Cu薄膜的界面粘合能由于CoSi而增加SiN _x / Co界面处有₂反应层，但在后退火处理过程中，SiN _x / Co界面处有SiO ₂形成，反应层急剧减少。

图形摘要