For the first time in the literature, a p-n junction photodiode based on β-Ga₂O₃ nanoflakes was fabricated on p-Si by two stage hydrothermal (nucleation and crystal growth) deposition method. The photodiode exhibited an excellent rectifying ratio of 1387 at ±10 V. The value of responsivity to ultraviolet (UV) light was 0.16 mA/W (at 0 V) and 17.1 A/W (at -10 V), respectively. The device showed a characteristic of a self-powered device. Furthermore, this study unveiled several advantages of usage of β-Ga₂O₃ nanoflakes to boost the performance of self-powered photodiodes.

中文翻译：

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的β-Ga ₂ ö ₃纳米片/ p型Si异质结自供电光电二极管

对于在文献中的第一次，一个PN结光电二极管基于的β-Ga _2个ö ₃纳米片是由两个阶段热液（成核和晶体生长）淀积方法制作在p型硅。光电二极管在±10 V时显示出极佳的整流比，为1387。对紫外线（UV）的响应度值分别为0.16 mA / W（在0 V时）和17.1 A / W（在-10 V时）。该设备表现出自供电设备的特性。此外，这项研究公布的β-Ga的使用有几个优点_2个Ø ₃纳米薄片，以提高自供电的光电二极管的性能。