Key role of the meniscus shape in crystallization of organic semiconductors during meniscus-guided coating,Materials Horizons

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Key role of the meniscus shape in crystallization of organic semiconductors during meniscus-guided coating
Materials Horizons ( IF 12.2 ) Pub Date : 2020-04-03 , DOI: 10.1039/d0mh00141d
Ke Zhang _{1,

2,

3} , Zuyuan Wang _{1,

2,

3} , Tomasz Marszalek _{1,

2,

3,

4,

5} , Michal Borkowski _{4,

5,

6,

7,

8} , George Fytas _{1,

2,

3} , Paul W. M. Blom _{1,

2,

3} , Wojciech Pisula _{1,

2,

3,

4,

5}

Affiliation

Solution processable organic semiconductors (OSCs) hold advantages for the fabrication of flexible and large-area electronic devices. Meniscus-guided coating (MGC) is one promising technique to tune the crystallization and thin film morphology of OSCs. In this work, we demonstrate the crucial role of the meniscus shape in the fluid flow and crystallization of OSCs during MGC. We demonstrate that angle-dependent dip-coating (ADDC) allows precise control of the meniscus shape. The use of a small meniscus angle during ADDC of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) enhances the crystallization and mass deposition of the OSC due to an increased upward fluid flow. The resulting aligned crystalline film with high surface coverage favors the charge carrier transport in C8-BTBT based field-effect transistors. This work provides comprehensive insight into the fundamental mechanism of OSC crystallization during MGC, which is important for the large-area deposition of OSCs for practical electronic applications.

中文翻译：

弯月面形状在弯月面引导涂层过程中在有机半导体结晶中的关键作用

可溶液处理的有机半导体（OSC）在制造柔性和大面积电子设备方面具有优势。弯液面引导涂层（MGC）是一种有前途的技术，可用于调节OSC的结晶和薄膜形态。在这项工作中，我们证明了弯液面形状在MGC期间OSC的流体流动和结晶中的关键作用。我们证明了依赖于角度的浸涂（ADDC）可以精确控制弯月面形状。2,7-二辛基[1]苯并噻吩并[3,2- b ] ADDC期间小弯月角的使用] [1]苯并噻吩（C8-BTBT）由于向上的向上流动增加了OSC的结晶和质量沉积。所得的具有高表面覆盖率的取向晶体膜有利于基于C8-BTBT的场效应晶体管中的载流子传输。这项工作为MGC期间OSC结晶的基本机制提供了全面的见解，这对于实际电子应用中OSC的大面积沉积非常重要。

更新日期：2020-04-03

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