This paper presents a new type of time domain CMOS temperature sensor with a 9b successive approximation register (SAR) control logic and a fine delay line. We adopted an N-type poly resistor as the sensing element for temperature linearity. The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general VTH transistors and the active die area was 0.432 mm2. The temperature resolution was 0.49 °C and the temperature error was from -1.6 to +0.6 °C over the range of 0 to 100 °C after two-point calibration. The supply voltage sensitivity was 0.085 °C/mV. The conversion rate was 25kHz and the energy efficiency was 7.2 nJ/sample.

中文翻译：

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基于多晶硅电阻的时域CMOS温度传感器，具有9b SAR和精细延迟线。

本文提出了一种新型的时域CMOS温度传感器，其具有9b逐次逼近寄存器（SAR）控制逻辑和精细的延迟线。我们采用N型多晶硅电阻作为温度线性度的感应元件。该芯片采用标准的0.18 m 1P6M体CMOS工艺和通用的VTH晶体管实现，有源管芯面积为0.432 mm2。两点校准后，温度分辨率为0.49°C，0至100°C范围内的温度误差为-1.6至+0.6°C。电源电压灵敏度为0.085°C / mV。转换速率为25kHz，能量效率为7.2nJ /样品。