The effect of deep-level defects is a key issue for the applications of CdZnTe high-flux photon counting devices of X-ray irradiations. However, the major trap energy levels and their quantitive relationship with the device's performance are not yet clearly understood. In this study, a 16-pixel CdZnTe X-ray photon counting detector with a non-uniform counting performance is investigated. The deep-level defect characteristics of each pixel region are analyzed by the current-voltage curves (I-V), infrared (IR) optical microscope photography, photoluminescence (PL) and thermally stimulated current (TSC) measurements, which indicate that the difference in counting performance is caused by the non-uniformly distributed deep-level defects in the CdZnTe crystals. Based on these results, we conclude that the CdZnTe detectors with a good photon counting performance should have a larger Te cd 2 + and Cd vacancy-related defect concentration and a lower A-center and Tei concentration. We consider the deep hole trap Tei, with the activation energy of 0.638-0.642 eV, to be the key deep-level trap affecting the photon counting performance. In addition, a theoretical model of the native defect reaction is proposed to understand the underlying relationships of resistivity, deep-level defect characteristics and photon counting performance.

中文翻译：

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深层缺陷对CdZnTe光子计数检测器性能的影响。

深层缺陷的影响是X射线辐照CdZnTe高通量光子计数装置应用的关键问题。但是，主要的陷阱能级及其与器件性能的定量关系尚不清楚。在这项研究中，研究了具有不均匀计数性能的16像素CdZnTe X射线光子计数检测器。通过电流-电压曲线（IV），红外（IR）光学显微镜照相，光致发光（PL）和热激励电流（TSC）测量来分析每个像素区域的深层缺陷特征，这表明计数的差异性能是由CdZnTe晶体中不均匀分布的深层缺陷引起的。根据这些结果，我们得出的结论是，具有良好光子计数性能的CdZnTe检测器应具有较大的Te cd 2 +和Cd空位相关的缺陷浓度以及较低的A中心和Tei浓度。我们认为激活能为0.638-0.642 eV的深孔陷阱Tei是影响光子计数性能的关键深层陷阱。此外，提出了天然缺陷反应的理论模型，以了解电阻率，深层缺陷特征和光子计数性能之间的潜在关系。