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Reaction Pathway for Efficient Cu2ZnSnSe4 Solar Cells from Alloyed Cu?Sn Precursor via a Cu‐Rich Selenization Stage
Solar RRL ( IF 6.0 ) Pub Date : 2020-04-02 , DOI: 10.1002/solr.202000124 Devendra Pareek 1 , Teoman Taskesen 1 , José A. Márquez 2 , Helena Stange 3 , Sergiu Levcenco 2 , Ibrahim Simsek 2 , David Nowak 1 , Timo Pfeiffelmann 1 , Wenjian Chen 1 , Christiane Stroth 1 , Mohamed H. Sayed 1 , Ulf Mikolajczak 1 , Jürgen Parisi 1 , Thomas Unold 2 , Roland Mainz 2 , Levent Gütay 1
Solar RRL ( IF 6.0 ) Pub Date : 2020-04-02 , DOI: 10.1002/solr.202000124 Devendra Pareek 1 , Teoman Taskesen 1 , José A. Márquez 2 , Helena Stange 3 , Sergiu Levcenco 2 , Ibrahim Simsek 2 , David Nowak 1 , Timo Pfeiffelmann 1 , Wenjian Chen 1 , Christiane Stroth 1 , Mohamed H. Sayed 1 , Ulf Mikolajczak 1 , Jürgen Parisi 1 , Thomas Unold 2 , Roland Mainz 2 , Levent Gütay 1
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The selenization of stacked elemental metallic layers (CuSn–Zn) is a commonly reported approach in kesterite Cu2ZnSnSe4 (CZTSe) processing. CZTSe formation via this approach usually involves a reaction route containing binary selenides, such as SnSe2−x. The high volatility of these phases at the necessary annealing temperatures (500–550 °C) makes this reaction pathway prone to Sn loss, which makes it challenging to control the composition and quality of the grown material. Herein, an approach based on stacked elemental and alloyed precursors is reported, and the benefits of using a Zn/CuSn/Zn configuration are discussed. The absence of nonalloyed elemental Sn helps in suppressing the formation and subsequent evaporation of SnSe2−x phases, preventing Sn loss from the film during selenization. This reaction pathway involves a process scheme which 1) starts with the growth of CZTSe in a “Cu‐rich” environment, 2) includes a shift of the composition by supply of SnSe2−x vapor, and 3) terminates in the “Cu‐poor” regime, leading to device efficiencies above 10%. This composition shift in the presented process appears similar to the final stage of the commonly known CIGSe three‐stage coevaporation.
中文翻译：
合金化Cu-高效Cu2ZnSnSe4太阳能电池的反应途径。富铜硒化阶段的锡前体
堆叠元素的金属层的硒化（铜的Sn-Zn）为在铜黄锡矿一个常用报告方法2 ZnSnSe 4（CZTSe）处理。通过这种方法形成CZTSe通常涉及包含二元硒化物（例如SnSe 2- x）的反应路线。这些相在必要的退火温度（500–550°C）下具有很高的挥发性，这使得该反应路径容易发生锡损失，这使得控制生长材料的成分和质量面临挑战。本文报道了一种基于堆叠的元素和合金前体的方法，以及使用Zn / Cu的好处讨论了Sn / Zn的构型。不含非合金元素Sn有助于抑制SnSe 2- x相的形成和随后的蒸发，防止硒化过程中薄膜中Sn的流失。该反应路径涉及一种工艺方案，该工艺方案是：1）从“富铜”环境中CZTSe的生长开始； 2）通过供应SnSe 2- x蒸气来改变组成，以及3）以“铜”终止“低”状态，导致设备效率超过10％。在提出的过程中这种成分变化似乎类似于众所周知的CIGSe三阶段共蒸发的最后阶段。
更新日期：2020-04-02
中文翻译：
合金化Cu-高效Cu2ZnSnSe4太阳能电池的反应途径。富铜硒化阶段的锡前体
堆叠元素的金属层的硒化（铜的Sn-Zn）为在铜黄锡矿一个常用报告方法2 ZnSnSe 4（CZTSe）处理。通过这种方法形成CZTSe通常涉及包含二元硒化物（例如SnSe 2- x）的反应路线。这些相在必要的退火温度（500–550°C）下具有很高的挥发性，这使得该反应路径容易发生锡损失，这使得控制生长材料的成分和质量面临挑战。本文报道了一种基于堆叠的元素和合金前体的方法，以及使用Zn / Cu的好处讨论了Sn / Zn的构型。不含非合金元素Sn有助于抑制SnSe 2- x相的形成和随后的蒸发，防止硒化过程中薄膜中Sn的流失。该反应路径涉及一种工艺方案，该工艺方案是：1）从“富铜”环境中CZTSe的生长开始； 2）通过供应SnSe 2- x蒸气来改变组成，以及3）以“铜”终止“低”状态，导致设备效率超过10％。在提出的过程中这种成分变化似乎类似于众所周知的CIGSe三阶段共蒸发的最后阶段。
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