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Growth of InZnP/ZnS core/shell quantum dots with wide-range and refined tunable photoluminescence wavelengths.
Dalton Transactions ( IF 3.5 ) Pub Date : 2020-04-23 , DOI: 10.1039/d0dt00575d
Jinyuan Zhang 1 , Huaimin Gu
Affiliation  

Owing to their environmentally friendly characteristic, InP-based quantum dots (QDs) show great potential in various fields as an alternative to Cd-based QDs. However, the current mainstream synthesis process, the (TMS)3P-based injection method, still faces many challenges, such as the high cost of (TMS)3P and complex temperature control. In contrast, the solvothermal method is considered to be more feasible and reproducible. Despite its potential advantages, little has been done to understand how the precursors influence the synthesis of InP QDs using the solvothermal method. In this research, InZnP/ZnS QDs were synthesized using practical phosphorus precursors (DEA)3P or (DMA)3P. Through the feasible regulation of zinc, indium, phosphorus and sulfur precursors, the band gap of the QDs could be widely and accurately tuned, and a much wider photoluminescence wavelength ranging from 484 nm to 651 nm could be achieved. Furthermore, InI3 and InBr3 contributed to the blueshift in the PL wavelengths, and the combination of (DEA)3P, (DMA)3P, n-DDT and t-DDT refined the PL wavelength with a small tuning gap of 5 nm.

中文翻译:

具有宽范围和精细的可调光致发光波长的InZnP / ZnS核/壳量子点的生长。

由于其对环境友好的特性,基于InP的量子点(QD)在各种领域中显示出巨大的潜力,可替代基于Cd的量子点。然而,当前的主流合成工艺,即基于(TMS)3P的注入方法,仍然面临许多挑战,例如(TMS)3P的高成本和复杂的温度控制。相反,溶剂热法被认为是更可行和可重复的。尽管具有潜在的优势,但几乎没有做过任何工作来了解前体如何使用溶剂热法影响InP QD的合成。在这项研究中,使用实际的磷前体(DEA)3P或(DMA)3P合成了InZnP / ZnS QD。通过对锌,铟,磷和硫前体的可行调节,可以对量子点的带隙进行广泛而精确的调谐,并且可以获得更宽的484 nm至651 nm的光致发光波长。此外,InI3和InBr3促成了PL波长的蓝移,(DEA)3P,(DMA)3P,n-DDT和t-DDT的组合精制了PL波长,并具有5​​ nm的小调谐间隙。
更新日期:2020-04-02
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