Ce-doped ZnO thin films were fabricated by sol–gel dip coating method with varying Ce concentrations of 1–5 at.wt.%. The influence of Ce doping on magnetic and dielectric properties has been investigated. Vibrating sample magnetometer results reveal that the Ce-doped ZnO material has a soft nature. The study of magnetic properties confirmed the ferromagnetic behavior at room temperature for all the synthesized thin films. The localized states of Ce atoms are the main contribution to the magnetic moment. Crystallinity of thin films is highly dependent on the magnetic properties. The increased percentage of Ce reduces the saturation magnetization and coercivity. By using an impedance analyzer, variation in the results of dielectric constant, dielectric loss and AC conductivity of prepared thin films at room temperature as a function of frequency ranges from 100 Hz to 1 MHz were investigated. The normal behavior of dielectric dispersion was shown by the thin films, as evidenced by the reduction of the dielectric constant and dielectric loss with the increase in frequency due to Maxwell–Wagner interfacial polarization. Similarly, dielectric results showed that the increase in frequency enhanced the AC conductivity. It is used to evaluate the minimum distance of hopping, maximum height of the barrier and the localized density of states at the Fermi level. The induced spin polarization is found for Ce doping.

Ce掺杂的ZnO薄膜是通过溶胶-凝胶浸涂法制备的，其中Ce的浓度变化为1-5 at.wt.％。已经研究了铈掺杂对磁性和介电性能的影响。振动样品磁力计的结果表明，掺Ce的ZnO材料具有柔软的性质。磁性的研究证实了所有合成薄膜在室温下的铁磁行为。Ce原子的局部状态是磁矩的主要贡献。薄膜的结晶度高度依赖于磁性。铈的增加百分比降低了饱和磁化强度和矫顽力。通过使用阻抗分析仪，介电常数结果的变化，研究了室温下制备的薄膜的介电损耗和交流电导率随频率范围从100 Hz到1 MHz的变化。薄膜显示了介电色散的正常行为，这是由于麦克斯韦-瓦格纳界面极化导致介电常数和介电损耗随频率增加而降低的结果。同样，介电结果表明，频率的增加增强了交流电导率。它用于评估最小跳变距离，势垒的最大高度以及费米能级的局部状态密度。发现了用于Ce掺杂的诱导的自旋极化。如麦克斯韦-瓦格纳界面极化所致，介电常数和介电损耗随频率的增加而降低。同样，介电结果表明，频率的增加增强了交流电导率。它用于评估最小跳变距离，势垒的最大高度以及费米能级的局部状态密度。发现了用于Ce掺杂的诱导的自旋极化。如麦克斯韦-瓦格纳界面极化所致，介电常数和介电损耗随频率的增加而降低。同样，介电结果表明，频率的增加增强了交流电导率。它用于评估最小跳变距离，势垒的最大高度以及费米能级的局部状态密度。发现了用于Ce掺杂的诱导的自旋极化。