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Effect of Lu doping on the structure, electrical properties and energy storage performance of AgNbO 3 antiferroelectric ceramics
Journal of Materials Science: Materials in Electronics ( IF 2.8 ) Pub Date : 2020-04-03 , DOI: 10.1007/s10854-020-03309-7
Shuaifei Mao , Nengneng Luo , Kai Han , Qin Feng , Xiyong Chen , Biaolin Peng , Laijun Liu , Changzheng Hu , Huanfu Zhou , Fujita Toyohisa , Yuezhou Wei

Abstract

Recently, AgNbO3 antiferroelectric ceramics have attracted great attention by virtue of their characters of high energy storage density and environmental friendliness. To further optimize the electrical properties, in this work, Lu2O3 modified AgNbO3 ceramics were prepared via conventional solid state method. Crystal structure and element analysis indicated the Lu3+ ion preferred to enter the A-site when Lu2O3 content was lower than 2 mol%, otherwise, it was more likely to form LuNbO4 or Lu3NbO7-based solid solutions. Remarkably improved stability of antiferroelectric phase was observed once Lu3+ ions enter into the A-site, on account of the decrease of cell volume and tolerance factor. As a consequence, an enhanced recoverable energy storage density (Wrec) of 3.5 J/cm3 was achieved in 1 mol% Lu2O3 modified AgNbO3 ceramics at 210 kV/cm, which is superior to the other lead-free ceramics under moderate electric field (< 220 kV/cm). It is believed our study will provide a good reference for the development of AgNbO3-based dielectric capacitors.



中文翻译:

鲁掺杂对AgNbO 3反铁电陶瓷结构,电性能和储能性能的影响

摘要

近来,AgNbO 3反铁电陶瓷由于其高储能密度和环境友好性的特性而引起了极大的关注。为了进一步优化电性能,在这项工作中,通过常规的固态方法制备了Lu 2 O 3改性的AgNbO 3陶瓷。晶体结构和元素分析表明,当Lu 2 O 3含量低于2 mol%时,Lu 3+离子优选进入A位,否则,更可能形成LuNbO 4或Lu 3 NbO 7基于固体的解决方案。由于细胞体积和耐受因子的减少,一旦Lu 3+离子进入A位,观察到反铁电相的稳定性显着提高。结果,在210 kV / cm的1 mol%Lu 2 O 3改性的AgNbO 3陶瓷中,可回收的储能密度(W rec)提高到3.5 J / cm 3,这优于其他无铅陶瓷在中等电场(<220 kV / cm)下。相信我们的研究将为开发基于AgNbO 3的介电电容器提供良好的参考。

更新日期:2020-04-03
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