Abstract

The thermal stability was one of the primary obstacles hindering the development of phase-change memory. In this paper, Sb/HfO₂ multilayer phase-change films were prepared by multilayer composite method. The transition process of Sb/HfO₂ multilayer films from amorphous to crystalline state was studied by in-situ heating. With the decrease of the thickness of Sb layer, the crystallization temperature of Sb/HfO₂ increased significantly. At the same time, the data retention temperature for 10 years increased from 14 °C of pure antimony to 147 °C of Sb/HfO₂. The bandgap became wider and the surface became smoother. The existence of a large number of Sb microcrystals inhibited the phase transformation process. Compared with single-layer Sb film, Sb/HfO₂ multilayer film had smaller volume change before and after phase transformation. The results showed that the addition of HfO₂ interlayer significantly enhanced the amorphous thermal stability of Sb and improved the effective contact between the phase-change layer and the electrode. Sb/HfO₂ multilayer film was a potential phase-change film with high stability and good reliability.

中文翻译：

---

改进的热稳定性和夹层HfO 2与锑膜的接触

摘要

热稳定性是阻碍相变存储器发展的主要障碍之一。本文采用多层复合法制备了Sb / HfO ₂多层相变膜。通过原位加热研究了Sb / HfO ₂多层膜从非晶态到结晶态的转变过程。随着Sb层厚度的减小，Sb / HfO ₂的结晶温度明显升高。同时，10年的数据保留温度从纯锑的14°C升高到Sb / HfO _2的147°C。带隙变宽，表面变光滑。大量的Sb微晶的存在抑制了相变过程。与单层Sb膜相比，Sb / HfO ₂多层膜在相变前后的体积变化较小。结果表明，HfO ₂中间层的添加显着增强了Sb的非晶态热稳定性，并改善了相变层与电极之间的有效接触。Sb / HfO ₂多层膜是潜在的相变膜，具有高稳定性和良好的可靠性。