Abstract

Cadmium telluride plus cadmium tellurite (CdTe + CdTeO₃) nanocomposite films were grown by radio frequency magnetron sputtering at room temperature. The CdTe + CdTeO₃ samples were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, UV–Vis absorption, and room temperature photoluminescence (RTPL). XRD and TEM results indicate that films are composed of CdTe and CdTeO₃ nanoparticles (NP’s) with 6.7 ± 0.8 nm and 6 ± 1 nm in size, respectively. CdTe NPs grew in hexagonal wurtzite and cubic zinc blende crystalline phases. CdTeO₃ NPs are crystalized in cubic phase. Direct bandgap (E_g) (first discrete electronic transition) calculation indicates E_g = 2.6 ± 0.2 eV for CdTe and 3.3 ± 0.2 eV for CdTeO₃. RTPL spectrum evidences a wide signal in the 2.0 to 3.25 eV interval. Results reveal that the emission band maximum, which is centered in the blue region of the visible light, is related with band-to-band transitions in CdTe NPs.

中文翻译：

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宽泛蓝光的CdTe + CdTeO 3纳米复合薄膜的结构和光学性质

摘要

通过射频磁控溅射在室温下生长碲化镉和碲化镉（CdTe + CdTeO ₃）纳米复合膜。CdTe + CdTeO ₃样品通过X射线衍射（XRD），透射电子显微镜（TEM），拉曼光谱，UV-Vis吸收和室温光致发光（RTPL）进行表征。XRD和TEM结果表明，薄膜由CdTe和CdTeO ₃纳米颗粒（NP's）组成，尺寸分别为6.7±0.8 nm和6±1 nm。CdTe NPs以六方纤锌矿和立方锌混合晶相生长。CdTeO ₃ NPs以立方相结晶。直接带隙（E _g）（第一次离散电子跃迁）计算表明 CdTe的E _g = 2.6±0.2 eV，CdTeO _3的E _g = 3.3±0.2 eV 。RTPL频谱表明在2.0至3.25 eV间隔内有宽信号。结果表明，最大发射带集中在可见光的蓝色区域，与CdTe NP中的带间跃迁有关。