当前位置：
X-MOL 学术
›
Bioelectrochemistry
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Role of the time dependence of Boltzmann open probability in voltage-gated proton channels.
Bioelectrochemistry ( IF 4.8 ) Pub Date : 2020-04-02 , DOI: 10.1016/j.bioelechem.2020.107520 Rolando Guidelli 1 , Lucia Becucci 1 , Giovanni Aloisi 1
Bioelectrochemistry ( IF 4.8 ) Pub Date : 2020-04-02 , DOI: 10.1016/j.bioelechem.2020.107520 Rolando Guidelli 1 , Lucia Becucci 1 , Giovanni Aloisi 1
Affiliation
|
The modeling and simulation of experimental families of current-time (I-t) curves of dimeric voltage-gated proton channels and of proton-conducting voltage sensing domains (VSDs) with a minimum of free parameters requires the movement of protons to be controlled by the rate of increase of the Boltzmann open probability p over time in passing from the holding to the depolarizing potential. Families of I-t curves of protomers and proton-conducting VSDs can be satisfactorily fitted by the use of a single free parameter expressing the rate constant kp for the increase of p over time. Families of I-t curves of dimeric Hv1 channels can be fitted by a model that assumes an initial proton current I1 flowing along the two monomeric units, while they are still operating separately; I1 is gradually replaced by a slower and more potential-dependent current I2 flowing when the two monomers start operating jointly under the control of the coiled-coil domain. Here too, p is assumed to increase over time with a rate constant kp that doubles in passing from I1 to I2, with fit requiring three free parameters. Chord conductance yields erroneously high gating charges when fitted by the Boltzmann function, differently from slope conductance.
中文翻译：
玻尔兹曼打开概率在电压门控质子通道中的时间依赖性作用。
对二聚电压门控质子通道和具有最小自由参数的质子传导电压感测域（VSD）的电流-时间（It）曲线的实验族进行建模和仿真，要求质子的运动受速率控制从保持到去极化电势的玻尔兹曼开放概率p随时间的增加。可以通过使用单个自由参数来表达质子传导子和质子传导性VSD的It曲线系列，该参数表示随时间增加的p的速率常数kp。可以通过一个模型拟合二聚体Hv1通道的It曲线系列，该模型假设初始质子电流I1沿着两个单体单元流动，而它们仍单独运行。当两种单体在盘绕线圈域的控制下共同开始工作时，I1逐渐被流动更慢且与电位有关的电流I2所代替。同样，这里也假定p随着速率常数kp随时间增加，该常数从I1到I2翻倍，而拟合则需要三个自由参数。当通过玻尔兹曼函数拟合时，和弦电导会产生错误的高门控电荷，这与斜率电导不同。
更新日期：2020-04-03
中文翻译：
玻尔兹曼打开概率在电压门控质子通道中的时间依赖性作用。
对二聚电压门控质子通道和具有最小自由参数的质子传导电压感测域（VSD）的电流-时间（It）曲线的实验族进行建模和仿真，要求质子的运动受速率控制从保持到去极化电势的玻尔兹曼开放概率p随时间的增加。可以通过使用单个自由参数来表达质子传导子和质子传导性VSD的It曲线系列，该参数表示随时间增加的p的速率常数kp。可以通过一个模型拟合二聚体Hv1通道的It曲线系列，该模型假设初始质子电流I1沿着两个单体单元流动，而它们仍单独运行。当两种单体在盘绕线圈域的控制下共同开始工作时，I1逐渐被流动更慢且与电位有关的电流I2所代替。同样，这里也假定p随着速率常数kp随时间增加，该常数从I1到I2翻倍，而拟合则需要三个自由参数。当通过玻尔兹曼函数拟合时，和弦电导会产生错误的高门控电荷，这与斜率电导不同。
京公网安备 11010802027423号