Abstract Homoepitaxial growth of a thick AlN layer on a 2-in.-diameter single crystal AlN(0 0 0 1) substrate prepared by physical vapor transport (PVT) was investigated by hydride vapor phase epitaxy (HVPE). A water-clear crack-free homoepitaxial layer with a thickness of 500 μm or more could be grown on the entire surface of the PVT-AlN substrate. No degradation of crystallinity was observed during homoepitaxial growth. X-ray rocking curve measurements of the homoepitaxial layer showed small full widths at half maximum of 11–16 arcsec, the same as those for the PVT substrates. A freestanding AlN substrate prepared from the homoepitaxial layer showed high optical transmittance in the deep ultraviolet region owing to low impurity concentrations.

中文翻译：

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通过氢化物气相外延在 2 英寸直径的 AlN 单晶衬底上同质外延生长 AlN

摘要 通过氢化物气相外延(HVPE) 研究了在通过物理气相传输(PVT) 制备的2 英寸直径单晶AlN(0 0 0 1) 衬底上同质外延生长厚AlN 层。可以在 PVT-AlN 衬底的整个表面上生长厚度为 500 μm 或更大的水透明无裂纹同质外延层。在同质外延生长期间没有观察到结晶度的降低。同质外延层的 X 射线摇摆曲线测量显示半峰全宽较小，为 11-16 弧秒，与 PVT 衬底的相同。由于低杂质浓度，由同质外延层制备的独立式 AlN 衬底在深紫外区域显示出高透光率。