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Solution-processed Cu(In,Ga)(Se,S)2 solar cells prepared via a surface sulfurization process
Journal of the Taiwan Institute of Chemical Engineers ( IF 5.5 ) Pub Date : 2020-04-02 , DOI: 10.1016/j.jtice.2020.02.007
Chung- Hsin Lu , Jen-Cheng Sung , Chang-Ying Ou , Rajan Kumar Singh

The photovoltaic (PV) characteristics of solution-coated Cu(In,Ga)Se2 films were effectively improved via a surface sulfurization in this study to overcome the complexity to control the appropriated amounts of sulfur ionsduring the sulfurization process.After sulfurization treatment, the Cu(In,Ga)(Se,S)2 films with double-graded band gap were obtained because the incorporation of sulfur-ion intoCu(In,Ga)Se2 films increasedthe band gap near the surface region.The formation of selenium vacancies in Cu(In,Ga)(Se,S)2 films were effectively diminished by adjusting H2S concentration. Band gap gradients and defect passivation reduced the interface recombination and improved the carrier collection in the devices. As the H2S concentration was raised from 0 to 1.0 vol%, the open-circuit voltage was increased from 541 to 596 mV, thereby boosting the conversion efficiency from 10.71to 12.40%. The reduction of vacancy defects and surface roughness suppressed the formation of shunt paths, resulting ina decrease indiode factor and leakage current. Compared with the Cu(In,Ga)(Se,S)2 films deriving from vacuum processes, solution-coated Cu(In,Ga)(Se,S)2 films with relatively small grains facilitated the sulfur diffusion along the grain boundaries into the films.Therefore, the appropriate H2S concentration used in the solution-coated Cu(In,Ga)(Se,S)2 films was less than vacuum processes. This investigation demonstrates that adjusting the concentrationof H2S is vital for enhancing the PV properties of thesolution-processed Cu(In,Ga)(Se,S)2 PV cells.



中文翻译:

通过表面硫化工艺固溶处理的Cu(In,Ga)(Se,S)2太阳能电池

这项研究通过表面硫化有效地改善了溶液包覆的Cu(In,Ga)Se 2薄膜的光伏(PV)特性,以克服在硫化过程中控制适当的硫离子量的复杂性。获得了具有双梯度带隙的Cu(In,Ga)(Se,S)2薄膜,这是因为将硫离子掺入到Cu(In,Ga)Se 2薄膜中增加了表面区域附近的带隙。在铜(的In,Ga)(SE,S)2层薄膜有效地通过调节ħ减少2S浓度。带隙梯度和缺陷钝化减少了界面重组,并改善了器件中的载流子收集。随着H 2 S浓度从0体积%升高到1.0体积%,开路电压从541 mV升高,从而将转换效率从10.71提高到12.40%。空位缺陷和表面粗糙度的减少抑制了分流路径的形成,从而导致了二极管系数和漏电流的减小。与基于Cu(In,Ga)的(SE,S)相比2片从真空处理,推导溶液涂层Cu(的In,Ga)(SE,S)2层膜具有相对小的晶粒容易沿晶界中的硫扩散到因此,适当的H 2溶液涂覆的Cu(In,Ga)(Se,S)2膜中使用的S浓度小于真空工艺。这项研究表明,调节H 2 S的浓度对于提高溶液处理的Cu(In,Ga)(Se,S)2 PV电池的PV性能至关重要。

更新日期:2020-04-02
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