The photovoltaic (PV) characteristics of solution-coated Cu(In,Ga)Se₂ films were effectively improved via a surface sulfurization in this study to overcome the complexity to control the appropriated amounts of sulfur ionsduring the sulfurization process.After sulfurization treatment, the Cu(In,Ga)(Se,S)₂ films with double-graded band gap were obtained because the incorporation of sulfur-ion intoCu(In,Ga)Se₂ films increasedthe band gap near the surface region.The formation of selenium vacancies in Cu(In,Ga)(Se,S)₂ films were effectively diminished by adjusting H₂S concentration. Band gap gradients and defect passivation reduced the interface recombination and improved the carrier collection in the devices. As the H₂S concentration was raised from 0 to 1.0 vol%, the open-circuit voltage was increased from 541 to 596 mV, thereby boosting the conversion efficiency from 10.71to 12.40%. The reduction of vacancy defects and surface roughness suppressed the formation of shunt paths, resulting ina decrease indiode factor and leakage current. Compared with the Cu(In,Ga)(Se,S)₂ films deriving from vacuum processes, solution-coated Cu(In,Ga)(Se,S)₂ films with relatively small grains facilitated the sulfur diffusion along the grain boundaries into the films.Therefore, the appropriate H₂S concentration used in the solution-coated Cu(In,Ga)(Se,S)₂ films was less than vacuum processes. This investigation demonstrates that adjusting the concentrationof H₂S is vital for enhancing the PV properties of thesolution-processed Cu(In,Ga)(Se,S)₂ PV cells.

这项研究通过表面硫化有效地改善了溶液包覆的Cu（In，Ga）Se ₂薄膜的光伏（PV）特性，以克服在硫化过程中控制适当的硫离子量的复杂性。获得了具有双梯度带隙的Cu（In，Ga）（Se，S）₂薄膜，这是因为将硫离子掺入到Cu（In，Ga）Se ₂薄膜中增加了表面区域附近的带隙。在铜（的In，Ga）（SE，S）_2层薄膜有效地通过调节ħ减少₂S浓度。带隙梯度和缺陷钝化减少了界面重组，并改善了器件中的载流子收集。随着H ₂ S浓度从0体积％升高到1.0体积％，开路电压从541 mV升高，从而将转换效率从10.71提高到12.40％。空位缺陷和表面粗糙度的减少抑制了分流路径的形成，从而导致了二极管系数和漏电流的减小。与基于Cu（In，Ga）的（SE，S）相比₂片从真空处理，推导溶液涂层Cu（的In，Ga）（SE，S）_2层膜具有相对小的晶粒容易沿晶界中的硫扩散到因此，适当的H ₂溶液涂覆的Cu（In，Ga）（Se，S）₂膜中使用的S浓度小于真空工艺。这项研究表明，调节H ₂ S的浓度对于提高溶液处理的Cu（In，Ga）（Se，S）₂ PV电池的PV性能至关重要。