Magnetic sensors based on nonlinear magnetoelectric (ME) effect can be used to measure weak dc and ac magnetic fields at room temperature. The focus of this paper is to present the nonlinear ME effect of parallel-placed dual FeNiMoSiB/PZT/FeNiMoSiB composites with small size which are operated in 180° anti-phase modulated mode and differential output configuration. In this design, the strong ME voltage at even order harmonics due to frequency doubling effect of magnetostriction is greatly attenuated. This is of great benefit to the design of the sensor signal conditioning circuit because strong even order harmonics limit the magnification of the first stage amplifier. Due to the nonlinear ME effect, the induced ME voltage of the odd order harmonics is modulated by a weak dc/ac magnetic field to be measured. The wideband frequency of weak magnetic field from dc-0.9f (f is the frequency of the driving field) can be recovered from the 1 st harmonic response by the lock-in demodulation method. The sensitivity and limit of detection of the anti-phase modulated differential ME dual-unit are 176.1 μV/μT and 2 nT/√Hz at 10 Hz, respectively.

基于非线性磁电（ME）效应的磁传感器可用于测量室温下的弱直流和交流磁场。本文的重点是介绍以180°反相调制模式和差分输出配置运行的小尺寸平行放置的双FeNiMoSiB / PZT / FeNiMoSiB复合材料的非线性ME效应。在这种设计中，由于磁致伸缩的倍频效应，偶数阶谐波处的强ME电压大大衰减了。这对传感器信号调理电路的设计非常有利，因为强偶次谐波会限制第一级放大器的放大倍数。由于非线性ME效应，奇数次谐波的感应ME电压由要测量的弱dc / ac磁场调制。可以通过锁定解调方法从一阶谐波响应中恢复f（f是驱动场的频率）。反相调制差分ME双单元在10 Hz时的灵敏度和检测限分别为176.1μV/μT和2 nT /√Hz。