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Thiourea-Based Extraction and Deposition of Gold for Electroless Nickel Immersion Gold Process
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2020-04-01 , DOI: 10.1021/acs.iecr.0c00493 Jieun Son 1 , Yeongran Hong 2 , Cafer T. Yavuz 2 , Jong-In Han 1
Industrial & Engineering Chemistry Research ( IF 3.8 ) Pub Date : 2020-04-01 , DOI: 10.1021/acs.iecr.0c00493 Jieun Son 1 , Yeongran Hong 2 , Cafer T. Yavuz 2 , Jong-In Han 1
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Gold electroless plating for surface finishing of electronic circuits, named electroless nickel immersion gold (ENIG), is widely practiced in the electronics packaging industry. Noncyanide substitutions of the current cyanide bath for immersion gold are being sought for environmental and safety reasons. Herein, as a promising option, a bath using a noncyanide gold complex, Au(I)–thiourea, was developed. The kinetics of gold deposition were estimated with respect to gold concentration, thiourea concentration, pH, and temperature; the transfer coefficient of gold concentration and activation energy were found to be 0.697 and 36.69 kJ·mol–1, respectively. In addition, the quality of gold coating in terms of corrosion resistance was verified by electrochemical analysis. The relationship between particle size and corrosion resistance of the coating was confirmed by morphology observation through scanning electron microscopy and Tafel plots. The corrosion potential of the gold layer with thiourea was found to be −62 mV, close to that of the layer using a thiosulfate–sulfite bath, with an advantage of faster deposition rate. The results suggest Au(I)–thiourea can serve as an eco-friendly and field-implementable option for the ENIG process, helping to realize a closed-loop process of gold: recovering the precious metal from electronic wastes and reusing it in new products.
中文翻译：
化学镀镍浸金工艺中硫脲基金的提取和沉积
用于电子电路表面处理的化学镀金被称为化学镀镍浸金（ENIG），在电子封装行业中得到了广泛的实践。出于环境和安全原因，正在寻求用当前的氰化物浴代替沉金。在此，作为一种有前途的选择，开发了一种使用非氰化物金络合物Au（I）-硫脲的镀液。根据金浓度，硫脲浓度，pH和温度估算了金沉积的动力学。金浓度和活化能的转移系数分别为0.697和36.69 kJ·mol –1， 分别。另外，通过电化学分析证实了金涂层的耐腐蚀性。通过扫描电子显微镜和Tafel图的形态观察证实了涂层的粒径和耐腐蚀性之间的关系。发现使用硫脲的金层的腐蚀电位为-62 mV，与使用硫代硫酸盐-亚硫酸盐浴的腐蚀电位接近，具有沉积速度更快的优势。结果表明，Au（I）-硫脲可作为ENIG工艺的一种环境友好且可现场实施的选择，有助于实现金的闭环工艺：从电子废物中回收贵金属并将其用于新产品中。
更新日期：2020-04-24
中文翻译：
化学镀镍浸金工艺中硫脲基金的提取和沉积
用于电子电路表面处理的化学镀金被称为化学镀镍浸金（ENIG），在电子封装行业中得到了广泛的实践。出于环境和安全原因，正在寻求用当前的氰化物浴代替沉金。在此，作为一种有前途的选择，开发了一种使用非氰化物金络合物Au（I）-硫脲的镀液。根据金浓度，硫脲浓度，pH和温度估算了金沉积的动力学。金浓度和活化能的转移系数分别为0.697和36.69 kJ·mol –1， 分别。另外，通过电化学分析证实了金涂层的耐腐蚀性。通过扫描电子显微镜和Tafel图的形态观察证实了涂层的粒径和耐腐蚀性之间的关系。发现使用硫脲的金层的腐蚀电位为-62 mV，与使用硫代硫酸盐-亚硫酸盐浴的腐蚀电位接近，具有沉积速度更快的优势。结果表明，Au（I）-硫脲可作为ENIG工艺的一种环境友好且可现场实施的选择，有助于实现金的闭环工艺：从电子废物中回收贵金属并将其用于新产品中。
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