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Enhanced Thermoelectric Properties of Electrodeposited Cu-Doped Te Films
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-04-02 00:00:00 , DOI: 10.1021/acsaem.9b02153 Swatchith Lal 1 , Kafil M. Razeeb 1 , Devendraprakash Gautam 1
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-04-02 00:00:00 , DOI: 10.1021/acsaem.9b02153 Swatchith Lal 1 , Kafil M. Razeeb 1 , Devendraprakash Gautam 1
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Bismuth telluride-based alloys are the best-known thermoelectric materials in the room-temperature regime. Here, we report on the enhanced thermoelectric properties of electrodeposited copper-doped tellurium films as an n-type thermoelectric material for near-room-temperature applications. With the increase of the copper content in the films, we observe an enhancement of the thermoelectric properties. Thereby, we investigate the role of copper in modifying the crystal structure, which leads to the amorphous nature of the films and the corresponding enhancement in the thermoelectric properties. The electrodeposited copper-doped tellurium films exhibit a high Seebeck coefficient of −227 μV/K, resulting to a power factor of 5.6 mW/mK2, which is a promising power factor observed for the electrodeposited thermoelectric materials and can be a favorable n-type thermoelectric material for device applications.
中文翻译：
电沉积掺铜Te薄膜的增强的热电性能
碲化铋基合金是室温下最著名的热电材料。在这里，我们报告了电沉积的铜掺杂碲膜作为近室温应用的n型热电材料的增强的热电性能。随着膜中铜含量的增加，我们观察到热电性能的增强。因此，我们研究了铜在改变晶体结构中的作用，这导致了薄膜的非晶性和热电性能的相应提高。电沉积的铜掺杂碲薄膜的塞贝克系数为-227μV/ K，因此功率因数为5.6 mW / mK 2，这是电沉积热电材料观察到的有希望的功率因数，并且可以是用于器件应用的有利的n型热电材料。
更新日期：2020-04-02
中文翻译：
电沉积掺铜Te薄膜的增强的热电性能
碲化铋基合金是室温下最著名的热电材料。在这里，我们报告了电沉积的铜掺杂碲膜作为近室温应用的n型热电材料的增强的热电性能。随着膜中铜含量的增加，我们观察到热电性能的增强。因此，我们研究了铜在改变晶体结构中的作用，这导致了薄膜的非晶性和热电性能的相应提高。电沉积的铜掺杂碲薄膜的塞贝克系数为-227μV/ K，因此功率因数为5.6 mW / mK 2，这是电沉积热电材料观察到的有希望的功率因数，并且可以是用于器件应用的有利的n型热电材料。
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