Prediction of a two-dimensional high-TC f-electron ferromagnetic semiconductor,Materials Horizons

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Prediction of a two-dimensional high-TC f-electron ferromagnetic semiconductor
Materials Horizons ( IF 12.2 ) Pub Date : 2020-04-01 , DOI: 10.1039/d0mh00183j
Bing Wang _{1,

2,

3,

4,

5} , Xiwen Zhang _{2,

3,

4,

6} , Yehui Zhang _{1,

2,

3,

4} , Shijun Yuan _{1,

2,

3,

4} , Yilv Guo _{1,

2,

3,

4} , Shuai Dong _{1,

2,

3,

4} , Jinlan Wang _{1,

2,

3,

4}

Affiliation

Two-dimensional (2D) ferromagnetic semiconductors (FMSs) exhibit novel spin-dependent electronic and optical properties, opening up exciting opportunities for nanoscale spintronic devices. However, experimentally confirmed 2D FMSs based on transition metal ions are rather limited and their performances are not satisfactory, e.g. typically with low Curie temperatures and small magnetic signals. Different from most known 2D magnets based on d-electrons, here an exotic 2D FMS based on rare-earth ions with f-electrons, a GdI₂ monolayer, is predicted to have a large magnetization (8 μ_B f.u.⁻¹), whose ferromagnetism can survive near room temperature (241 K). In addition, with a small exfoliation energy from its layered van der Waals (vdW) bulk, this GdI₂ monolayer holds excellent dynamical and thermal stabilities, making our prediction promising in experiments. Our prediction not only offers a compelling FMS for spintronics, but also provides an alternative route to acquire more high-performance 2D FMSs, going beyond pure d-electron compounds.

中文翻译：

二维高TC f电子铁磁半导体的预测

二维（2D）铁磁半导体（FMS）具有新颖的自旋依赖性电子和光学特性，为纳米级自旋电子器件打开了令人兴奋的机遇。然而，实验证实的基于过渡金属离子的2D FMS相当有限，并且它们的性能不令人满意，例如通常在居里温度低和磁信号小的情况下。基于d电子，这里异国2D FMS基于稀土离子与f电子，一个GDI大多数已知的2D磁铁不同₂单层，被预测为具有大的磁化强度（8 μ_乙福^-1），其铁磁性可以在室温（241 K）附近生存。此外，该GdI ₂单层的分层范德华（vdW）堆积层产生的剥落能量很小，因此具有出色的动力学和热稳定性，因此我们的预测在实验中很有希望。我们的预测不仅为自旋电子学提供了引人注目的FMS，而且还提供了一条获取纯二维电子化合物以外的更多高性能2D FMS的替代途径。

更新日期：2020-04-01

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