Abstract AlSb crystals as a dual-carrier compound semiconductor have a great potential application for the room-temperature detectors, comparative to high-purity Ge and CdZnTe detectors. However, the single crystal growth of AlSb suffers from the high reactivity of Al, which causes strong adheres of the crystal to the crucible walls. In this work, an in-situ synthesis method was developed using a pBN crucible sealed in a quartz crucible. Meanwhile, the reaction of Al and Sb was settled under the melting point with two stages for solid reaction and liquid reaction in turn. The cycles of rapid directional solidification and refusion were implemented for homogenization. Bulk crystals of AlSb with large grain size 5 × 5 mm2 were obtained from the vertical Bridgman method. The results of the XRD and EDS test showed a single zinc blende structure phase with a nearly stoichiometric atomic ratio of 49.7: 50.3 (Al: Sb). AlN was observed between AlSb/BN interface during the crystals with normal overheating synthesis. The sticking mechanism was ascribed to the increase of the adhesion energy with PBN crucible after the production of AlN. The chemical reactivity of Al has been fully inhibited during the Bridgman growth of AlSb.

中文翻译：

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AlSb 的无粘附布里奇曼生长

摘要 AlSb 晶体作为一种双载流子化合物半导体，与高纯 Ge 和 CdZnTe 探测器相比，在室温探测器中具有巨大的应用潜力。然而，AlSb 的单晶生长受到 Al 的高反应性的影响，这导致晶体强烈粘附在坩埚壁上。在这项工作中，使用密封在石英坩埚中的 pBN 坩埚开发了一种原位合成方法。同时，Al和Sb的反应在熔点以下进行，依次为固反应和液相反应两个阶段。实施快速定向凝固和回流的循环以进行均质化。从垂直布里奇曼方法获得大晶粒尺寸 5 × 5 mm2 的 AlSb 块状晶体。XRD 和 EDS 测试的结果显示出单一的闪锌矿结构相，其化学计量比为 49.7:50.3（Al:Sb）。在正常过热合成的晶体期间，在 AlSb/BN 界面之间观察到 AlN。粘附机制归因于在生产 AlN 后与 PBN 坩埚的粘附能增加。在 AlSb 的 Bridgman 生长过程中，Al 的化学反应性已被完全抑制。