Abstract Direct heteroepitaxy of GaAsP and GaP on GaAs and on Si by low-pressure hydride vapor phase epitaxy (HVPE) is investigated as prior studies for photovoltaics and non-linear optics applications. When growing GaAsP on GaAs, it is found that the ambient gas during substrate pre-heating influences the ternary composition as well as the crystalline quality of the subsequent growth. GaAs0.72P0.28 with bandgap energy of 1.76 eV has been achieved, which would be suitable for a top cell in Si tandem solar cell structures. Growth of GaP was investigated on planar GaAs as a prior study for realizing orientation patterned (OP) GaP on OP-GaAs. Threading dislocations caused by the 3.6% lattice mismatch between GaP and GaAs are suppressed by adjusting the GaCl flow, achieving a low full width at half maximum of 146 arcsec for the X-ray diffraction omega scan. Direct heteroepitaxy of GaAsP on Si aiming for achieving a GaAsP/Si dual junction solar cell is demonstrated. The inherent problem of initiating nucleation during the direct heteroepitaxy of III-V on Si by HVPE is overcome by utilizing the vapor mixing approach to grow a low-temperature GaP buffer layer on Si, followed by a GaAsP layer grown by conventional HVPE.

中文翻译：

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通过低压氢化物气相外延在 GaAs 和 Si 上进行 GaAsP 和 GaP 异质外延

摘要 作为光伏和非线性光学应用的先前研究，研究了通过低压氢化物气相外延 (HVPE) 在 GaAs 和 Si 上进行 GaAsP 和 GaP 的直接异质外延。当在 GaAs 上生长 GaAsP 时，发现衬底预热期间的环境气体会影响三元组成以及后续生长的晶体质量。已经实现了带隙能量为 1.76 eV 的 GaAs0.72P0.28，这将适用于 Si 串联太阳能电池结构中的顶部电池。作为在 OP-GaAs 上实现定向图案化 (OP) GaP 的先验研究，在平面 GaAs 上研究了 GaP 的生长。GaP 和 GaAs 之间 3.6% 的晶格失配引起的螺纹位错通过调节 GaCl 流量得到抑制，为 X 射线衍射欧米茄扫描实现了 146 弧秒的低半高全宽。展示了 GaAsP 在 Si 上的直接异质外延，旨在实现 GaAsP/Si 双结太阳能电池。通过利用蒸汽混合方法在 Si 上生长低温 GaP 缓冲层，然后通过常规 HVPE 生长 GaAsP 层，克服了通过 HVPE 在 Si 上直接异质外延 III-V 族期间引发成核的固有问题。