Abstract In this study, intermediate impurities on synthesized AgGaS2 polycrystal and grown AgGaS2 single crystal were studied by X-ray photoelectron spectroscopy (XPS) which was recommended as workable method to characterize intermediate impurities on AgGaS2 while the content of those impurity components were too low to be detected using common X-ray diffraction (XRD) measurement. Meanwhile, XRD, Energy Dispersive Spectrometer (EDS) and Fourier-transform infrared spectrophotometry (FTIR) were employed to characterize the quality of AgGaS2 crystals. The results manifest that AgGaS2 crystal with high infrared transmittance and good uniformity were successfully obtained. However, XPS results indicate that intermediate impurities with different content and varieties exist on both AgGaS2 polycrystal and AgGaS2 single crystal respectively and decrease of intermediates may lead to improvement of its optical property.

中文翻译：

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垂直梯度冷冻法生长的高质量AgGaS2单晶中间杂质的研究

摘要 本研究通过 X 射线光电子能谱 (XPS) 研究合成的 AgGaS2 多晶和生长的 AgGaS2 单晶中的中间杂质，该方法被推荐为表征 AgGaS2 中间杂质的可行方法，而这些杂质成分的含量太低而无法使用普通的 X 射线衍射 (XRD) 测量进行检测。同时，采用XRD、能谱仪（EDS）和傅里叶变换红外分光光度法（FTIR）对AgGaS2晶体的质量进行表征。结果表明成功获得了红外透射率高、均匀性好的AgGaS2晶体。然而，