Abstract This article presents a detailed analysis of beta ray exposed thermoluminescence response of a series of Eu3+ doped (0.5–10 mol%) Mg2SiO4 nanocrystalline samples successfully synthesized through solid state reaction method. Optimizing the doping concentration of Eu3+ ion in Mg2SiO4 phosphor was found as 3 mol%. Two main peaks were seen at 246 °C and 374 °C and also low temperature peak at 78 °C. The intensities of these peaks were increased linearly with increasing beta absorbed dose. T m − T s t o p method was used to reveal trap levels. Variable heating rate and computerized glow curve deconvolution methods were also used to evaluate the number of peaks and kinetic parameters, namely activation energy and frequency factor. The results of a series of experiments carried out to investigate some fading characteristics of Mg2SiO4:Eu3+ were also presented. The findings suggest that thermoluminescence properties of Mg2SiO4:Eu3+ makes this material suitable and promising dosimetric phosphor material for medical applications.

中文翻译：

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铕掺杂硅酸镁在β暴露后的热释光行为

摘要 本文详细分析了一系列通过固态反应方法成功合成的 Eu3+ 掺杂 (0.5–10 mol%) Mg2SiO4 纳米晶样品的 β 射线暴露热释光响应。发现优化 Mg2SiO4 磷光体中 Eu3+ 离子的掺杂浓度为 3 mol%。两个主峰出现在 246 °C 和 374 °C，低温峰出现在 78 °C。这些峰的强度随着β吸收剂量的增加而线性增加。T m - T stop 方法用于揭示陷阱水平。还使用可变加热速率和计算机化辉光曲线解卷积方法来评估峰的数量和动力学参数，即活化能和频率因子。为研究 Mg2SiO4 的一些褪色特性而进行的一系列实验的结果：还介绍了 Eu3+。研究结果表明，Mg2SiO4:Eu3+ 的热释光特性使这种材料成为适合且有前途的医学应用剂量测定磷光体材料。