Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation and thermal annealing are reported on. A complete annihilation of implantation-induced extended defects (dislocation loops), quasi-point defects and related donor centers was observed as a result of a two-stage arsenic activation annealing. A high degree of activation of implanted arsenic was achieved with the annealing. In some cases, the annealing was found to lead to the modification of the properties of the ‘base’ layers not affected by implantation due to activation of uncontrolled acceptor defects and resulting changes in the degree of electrical compensation.

报道了用砷离子注入和热退火改性的n型HgCdTe薄膜表面性能的霍尔效应研究结果。由于两阶段砷活化退火的结果，观察到了植入物引起的扩展缺陷（位错环），准点缺陷和相关的供体中心的完整an没。通过退火实现了植入砷的高度活化。在某些情况下，发现退火会导致不受控制的受体缺陷的激活和电补偿程度的变化，导致不受植入影响的“基础”层性能的改变。