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Tracking Dynamic Doping in a Solid-State Electrochromic Device: Raman Microscopy Validates the Switching Mechanism.
Analytical Chemistry ( IF 6.7 ) Pub Date : 2020-03-31 , DOI: 10.1021/acs.analchem.0c00513
Anjali Chaudhary 1 , Devesh K Pathak 1 , Manushree Tanwar 1 , Rajesh Kumar 1
Affiliation  

Solid-state electrochromic devices often need appropriate characterization to establish the real working mechanism for optimization and diagnosis. Raman mapping has been used here to track "dynamic doping", an important concept in organic electronics and in polythiophene-based solid-state electrochromic devices to understand and validate the mechanism of bias-induced redox-driven color switching. The proposed method demonstrates the live formation and movement of polarons which is best suited for in situ solid-state Raman spectroelectrochemistry. A 2-fold approach has been adopted here for this (1) by fabricating a working device in cross bar geometry followed by in situ spectroscopy to demonstrate the device functioning and (2) by carrying out Raman mapping from a device in custom-designed thin-film-transistor-like geometry to track and actually "see" the mechanism spectroscopically.

中文翻译:

跟踪固态电致变色器件中的动态掺杂:拉曼显微镜验证了切换机制。

固态电致变色设备通常需要进行适当的表征,以建立用于优化和诊断的真正工作机制。拉曼映射已用于跟踪“动态掺杂”,这是有机电子学和基于聚噻吩的固态电致变色器件中的重要概念,用于理解和验证由偏置引起的氧化还原驱动的色彩切换的机制。提出的方法证明了极化子的实时形成和运动,最适合原位固态拉曼光谱电化学。
更新日期:2020-04-23
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