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Influences of Cr Content on the Phase Transformation Properties and Stress Change in V–Cr–O Thin-Film Libraries
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-04-01 , DOI: 10.1021/acsaelm.0c00256 Xiao Wang 1 , Ellen Suhr 1 , Lars Banko 1 , Steffen Salomon 1 , Alfred Ludwig 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-04-01 , DOI: 10.1021/acsaelm.0c00256 Xiao Wang 1 , Ellen Suhr 1 , Lars Banko 1 , Steffen Salomon 1 , Alfred Ludwig 1
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VO2-based thin-film libraries with a continuous composition spread of Cr were obtained by reactive cosputtering. Gradual changes in the crystalline structures of VO2 were observed in the thin-film libraries at room temperature as the M1 phase exists for Cr < 1.2 at. %, the M2 phase for Cr > 4.2 at. %, and the T phase in between. Although X-ray diffraction indicates that only VO2 phases exist in the library, X-ray photoelectron spectroscopy reveals an increased V5+/V4+ ratio with increasing Cr content along the V–Cr–O library. A V–Cr–O phase diagram was assessed based on the results of temperature-dependent X-ray diffraction of the libraries. Microstructures of the V–Cr–O libraries were studied by scanning electron microscopy and atomic force microscopy. High-throughput temperature-dependent electrical resistance [R(T)] and stress [σ(T)] measurements were performed on the V–Cr–O libraries to systematically study the influence of Cr on the transformation properties. The transformation temperature Tc was increased by 4.9 K/at. % in the composition range 2.8 at. % < Cr < 7.3 at. % and by 1.2 K/at. % for Cr > 7.3 at. %. The resistance change across the phase transformation was decreased from 3 to 1 order of magnitude with Cr content increasing from 1.1 at. % up to 12.6 at. %, and the R(T) curves became less abrupt. The addition of Cr increased the stress change across the phase transformation up to 1.3 GPa for a Cr content of 3.3 at. %. However, for increased Cr contents from 3.3 to 9 at. %, the stress change decreased to 380 MPa. This could be because of the increased fraction of an O-rich VOx phase in the films and a changed crystallographic orientation for Cr-rich V–Cr–O.
中文翻译：
Cr含量对V–Cr–O薄膜库的相变特性和应力变化的影响
通过反应性共溅射获得具有连续的Cr成分分布的基于VO 2的薄膜库。在室温下，在薄膜库中观察到VO 2的晶体结构逐渐变化，因为Cr <1.2 at时存在M1相。％，Cr> 4.2 at。时的M2相。％，并且介于T相之间。尽管X射线衍射表明库中仅存在VO 2相，但X射线光电子能谱显示V 5+ / V 4+升高随V–Cr–O库中Cr含量的增加而变化的比率。根据库的温度依赖性X射线衍射结果评估了AV–Cr–O相图。通过扫描电子显微镜和原子力显微镜研究了V–Cr–O库的微观结构。在V–Cr–O库中进行了高通量温度相关电阻[ R（T）]和应力[σ（T）]测量，以系统地研究Cr对相变特性的影响。转变温度T c增加了4.9 K / at。在组成范围2.8at。％的％。％<Cr <7.3 at。％和1.2 K / at。Cr> 7.3 at。时的％％。整个相变的电阻变化从3个数量级减少到1个数量级，而Cr含量从1.1 at.m增加。％高达12.6 at。％，并且R（T）曲线变得不那么突然。Cr的添加使3.3 at。Cr的含量增加了整个相变期间的应力变化，最高可达1.3 GPa。％。但是，Cr含量从3.3at增加到9at。％，应力变化降低到380MPa。这可能是由于膜中富O的VO x相的比例增加以及富Cr的V–Cr–O的晶体学取向发生了变化。
更新日期：2020-04-01
中文翻译：
Cr含量对V–Cr–O薄膜库的相变特性和应力变化的影响
通过反应性共溅射获得具有连续的Cr成分分布的基于VO 2的薄膜库。在室温下，在薄膜库中观察到VO 2的晶体结构逐渐变化，因为Cr <1.2 at时存在M1相。％，Cr> 4.2 at。时的M2相。％，并且介于T相之间。尽管X射线衍射表明库中仅存在VO 2相，但X射线光电子能谱显示V 5+ / V 4+升高随V–Cr–O库中Cr含量的增加而变化的比率。根据库的温度依赖性X射线衍射结果评估了AV–Cr–O相图。通过扫描电子显微镜和原子力显微镜研究了V–Cr–O库的微观结构。在V–Cr–O库中进行了高通量温度相关电阻[ R（T）]和应力[σ（T）]测量，以系统地研究Cr对相变特性的影响。转变温度T c增加了4.9 K / at。在组成范围2.8at。％的％。％<Cr <7.3 at。％和1.2 K / at。Cr> 7.3 at。时的％％。整个相变的电阻变化从3个数量级减少到1个数量级，而Cr含量从1.1 at.m增加。％高达12.6 at。％，并且R（T）曲线变得不那么突然。Cr的添加使3.3 at。Cr的含量增加了整个相变期间的应力变化，最高可达1.3 GPa。％。但是，Cr含量从3.3at增加到9at。％，应力变化降低到380MPa。这可能是由于膜中富O的VO x相的比例增加以及富Cr的V–Cr–O的晶体学取向发生了变化。
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