The fabrication of kesterite CZTSe solar cells via an electrodeposition method provides an attractive approach for the low‐cost and environment‐friendly energy supply, yet the highest conversion efficiency for such solar cells (around 9%) is still far away from the highest efficiency of Cu‐based kesterite solar cells. Herein, a 10.54% efficient CZTSe solar cell (0.28 cm² active sized area, without an antireflection layer) is developed by introducing electrodeposited Cu–Ge alloy layer at the bottom of metal precursor. It is found that the presence of Ge element within the bottom of the film can promote downward diffusion of Sn element. Consequently, the distribution of Sn is relatively homogeneous during the annealing process; thus, the formation of undesirable defect clusters is inhibited and the band alignment of the CdS/CZTSe interface is optimized. As a result, the conversion efficiency of CZTSe thin‐film solar cells is increased from 6.74% to 10.54%, which is the highest efficiency reported for electrochemically fabricated CZTSe solar cells.

中文翻译：

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锗掺杂电沉积法制备效率超过10％的纯CZTSe太阳能电池

通过电沉积方法制造的硅藻土CZTSe太阳能电池为低成本和环境友好的能源供应提供了一种有吸引力的方法，但是此类太阳能电池的最高转换效率（约9％）仍远没有达到最高的转换效率。铜基钾长石太阳能电池。此处，效率为10.54％的CZTSe太阳能电池（0.28 cm ²通过在金属前驱体的底部引入电沉积的Cu-Ge合金层来开发出有效尺寸的区域（没有抗反射层）。发现在膜的底部内存在Ge元素可以促进Sn元素的向下扩散。因此，在退火过程中，Sn的分布相对均匀。因此，抑制了不良缺陷簇的形成，并优化了CdS / CZTSe界面的能带排列。结果，CZTSe薄膜太阳能电池的转换效率从6.74％提高到了10.54％，这是电化学制造CZTSe太阳能电池的最高效率。