The optical and structural properties of ZnO nanorods that are modified using H2O2 and used as the conductive filament (CF) for poly(methyl methacrylate) (PMMA)-based resistive switching (Rs) applications are studied. ZnO nanorods are used as the CF for a PMMA-based Rs device, to determine their specific properties and to determine the effect of oxygen vacancies on the Rs performance in ZnO. The Rs performance for PMMA-based devices is affected by treatment with H2O2. An appropriate H2O2 treatment time produces a significant change in the Rs performance for a PMMA/ZnO nanorod array device, because there is a change in the number of oxygen vacancies in ZnO that is treated with H2O2 solution at 60◦C for 60 s. This study demonstrates the operation of a PMMA-based Rs device that features a ZnO CF that undergoes treatment

中文翻译：

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通过 $$\hbox {H}_2\hbox {O}_2$$H2O2 处理改性的 ZnO 纳米棒的光学性质和缺陷，并用作基于聚（甲基丙烯酸甲酯）的电阻开关应用的导电丝

研究了使用 H2O2 改性并用作聚甲基丙烯酸甲酯 (PMMA) 基电阻开关 (Rs) 应用的导电丝 (CF) 的 ZnO 纳米棒的光学和结构特性。ZnO 纳米棒用作基于 PMMA 的 Rs 器件的 CF，以确定它们的特定性质并确定氧空位对 ZnO 中 Rs 性能的影响。基于 PMMA 的器件的 Rs 性能受 H2O2 处理的影响。适当的 H2O2 处理时间会使 PMMA/ZnO 纳米棒阵列器件的 Rs 性能发生显着变化，因为在 60℃下用 H2O2 溶液处理 60 秒后，ZnO 中的氧空位数量发生了变化。该研究展示了基于 PMMA 的 Rs 器件的操作，该器件具有经过处理的 ZnO CF