The contribution deals with growth of ZnO nanowires on metal catalysts by using of pulsed laser deposition and with the influence of growth temperature. The process of nanowires preparation comprised two technological steps—both were based on pulsed laser ablation processes: (1) production of metal nanoparticles by laser ablation in liquids and (2) pulsed laser deposition of ZnO nanowires by ablation of ZnO target on substrate with metal nanoparticles. Nanoparticles from various metals (Au, Ag, Ni, Cu, Al, Mg, Zn, Sn and BiSn alloy) were prepared by pulsed laser ablation at 1064 nm in deionised water. Colloids contained metal nanoparticles were applied on Si (100) substrates, and after drying, nanoparticles served as catalysts of VLS crystallisation. Temperatures in interval 600—200 °C were experimentally compared for the nanowires growth with applied ablation laser working at 248 nm. The lowest achieved temperature value for growth of ZnO nanowires was 425–450 °C. However, among applied metals Cu and Al nanoparticles only successfully catalysed ZnO nanowires at this temperature. Properties of prepared samples were investigated by scanning electron microscopy and photoluminescence. Experimental results revealed that along with the growth temperature, selection of proper metal catalyst is also important factor for nanowires crystallisation.

中文翻译：

---

使用激光烧蚀工艺生长 ZnO 纳米线的低温极限

该贡献涉及通过使用脉冲激光沉积和生长温度的影响在金属催化剂上生长 ZnO 纳米线。纳米线的制备过程包括两个技术步骤——均基于脉冲激光烧蚀工艺：（1）通过在液体中激光烧蚀生产金属纳米粒子；（2）通过用金属烧蚀衬底上的 ZnO 靶材来脉冲激光沉积 ZnO 纳米线纳米粒子。在去离子水中通过 1064 nm 的脉冲激光烧蚀制备来自各种金属（Au、Ag、Ni、Cu、Al、Mg、Zn、Sn 和 BiSn 合金）的纳米颗粒。将含有金属纳米粒子的胶体施加在 Si (100) 基材上，干燥后，纳米粒子作为 VLS 结晶的催化剂。实验比较了 600-200 °C 区间内的温度与在 248 nm 下工作的应用烧蚀激光的纳米线生长。ZnO 纳米线生长的最低达到温度值为 425-450 °C。然而，在应用的金属中，Cu 和 Al 纳米颗粒仅在该温度下成功催化了 ZnO 纳米线。通过扫描电子显微镜和光致发光研究制备的样品的性质。实验结果表明，除了生长温度外，选择合适的金属催化剂也是纳米线结晶的重要因素。通过扫描电子显微镜和光致发光研究制备的样品的性质。实验结果表明，除了生长温度外，选择合适的金属催化剂也是纳米线结晶的重要因素。通过扫描电子显微镜和光致发光研究制备的样品的性质。实验结果表明，除了生长温度外，选择合适的金属催化剂也是纳米线结晶的重要因素。