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Ag8+ ion irradiation modulated structural, microstructural, defect, and magnetization in ZnO thin films
Vacuum ( IF 3.8 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.vacuum.2020.109342 Goutam Kumar Gupta , Lokesh Saini , Sunil Ojha , Balram Tripathi , Devesh K. Avasthi , Ambesh Dixit
Vacuum ( IF 3.8 ) Pub Date : 2020-06-01 , DOI: 10.1016/j.vacuum.2020.109342 Goutam Kumar Gupta , Lokesh Saini , Sunil Ojha , Balram Tripathi , Devesh K. Avasthi , Ambesh Dixit
Abstract The irradiation effect of high energy silver ion (Ag8+) has been investigated on ZnO thin films to understand their impact on structural, microstructural, optical, electronic and magnetic properties. The RF sputtered pristine ZnO/Si thin films are polycrystalline and highly textured along (0 0 2) plane. The irradiated ZnO/Si samples showed enhanced structural and microstructural defects with irradiation time. The lattice parameters have reduced for irradiated ZnO thin films, suggesting structural deformation. The irradiation has resulted into enhanced defect density and strain in these thin films. A weak room temperature ferromagnetic moment (3.24 × 10−4 emu cm−2) has been observed, which has reduced drastically for Ag8+ irradiated samples up to 1.05 × 10−4 emu cm−2. The observed reduction in saturation magnetization has been attributed to the enhanced microstructural defects, lowering the free charge carriers and increasing the recombination centers simultaneously.
中文翻译:
Ag8+ 离子辐照调制 ZnO 薄膜中的结构、微观结构、缺陷和磁化
摘要 研究了高能银离子 (Ag8+) 对 ZnO 薄膜的辐照效应,以了解它们对结构、微观结构、光学、电子和磁性能的影响。射频溅射的原始 ZnO/Si 薄膜是多晶的,并且沿 (0 0 2) 平面具有高度纹理。辐照后的 ZnO/Si 样品显示出随辐照时间增加的结构和微观结构缺陷。辐照后的 ZnO 薄膜的晶格参数降低,表明结构变形。辐照导致这些薄膜中的缺陷密度和应变增加。已观察到弱室温铁磁矩 (3.24 × 10−4 emu cm−2),对于 Ag8+ 辐照样品,其显着降低至 1.05 × 10−4 emu cm−2。
更新日期:2020-06-01
中文翻译:
Ag8+ 离子辐照调制 ZnO 薄膜中的结构、微观结构、缺陷和磁化
摘要 研究了高能银离子 (Ag8+) 对 ZnO 薄膜的辐照效应,以了解它们对结构、微观结构、光学、电子和磁性能的影响。射频溅射的原始 ZnO/Si 薄膜是多晶的,并且沿 (0 0 2) 平面具有高度纹理。辐照后的 ZnO/Si 样品显示出随辐照时间增加的结构和微观结构缺陷。辐照后的 ZnO 薄膜的晶格参数降低,表明结构变形。辐照导致这些薄膜中的缺陷密度和应变增加。已观察到弱室温铁磁矩 (3.24 × 10−4 emu cm−2),对于 Ag8+ 辐照样品,其显着降低至 1.05 × 10−4 emu cm−2。