Abstract B-doped double-layer diamond films were prepared by microwave plasma chemical vapor deposition. The effects of different B-doping concentrations on the crystal quality, surface morphology, surface composition and the conductivity, secondary electron emission performance of the films were investigated. It is found that the increased conductivity with increased B-doping is beneficial for secondary electron emission. However, the degraded crystal quality of diamond, increased surface sp2 carbon and the segregation of B element at surface due to increased B-doping could degrade the secondary electron emission performance of the film. So it can be considered as a competition between improved vertical conductance that tends to increase secondary electron escape depth and finally degrading surface properties as a function of B-doping. The double-layer film with a light B-doping concentration has good crystal quality and enough conductivity, which helps to obtain the best secondary electron emission performance.

中文翻译：

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双层掺硼金刚石薄膜的二次电子发射特性

摘要 采用微波等离子体化学气相沉积法制备了掺硼双层金刚石薄膜。研究了不同B掺杂浓度对薄膜晶体质量、表面形貌、表面组成和电导率、二次电子发射性能的影响。发现随着 B 掺杂的增加，电导率的增加有利于二次电子发射。然而，金刚石晶体质量的下降、表面 sp2 碳的增加和 B 元素在表面的偏析（由于 B 掺杂增加）会降低薄膜的二次电子发射性能。因此，可以将其视为倾向于增加二次电子逃逸深度的改进垂直电导与最终降低作为 B 掺杂函数的表面特性之间的竞争。