New flowing afterglow/Langmuir probe investigations of electronic attachment to SF₆ are described. Thermal attachment rate constants are found to increase from 1.5 × 10⁻⁷ cm³ s⁻¹ at 200 K to 2.3 × 10⁻⁷ cm³ s⁻¹ at 300 K. Attachment rate constants over the range of 200–700 K (from the present work and the literature), together with earlier measurements of attachment cross sections, are analyzed with respect to electronic and nuclear contributions. The latter suggest that only a small nuclear barrier (of the order of 20 meV) on the way from SF₆ to SF₆⁻ has to be overcome. The analysis shows that not only s-waves but also higher partial waves have to be taken into account. Likewise, finite-size effects of the neutral target contribute in a non-negligible manner.

中文翻译：

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对电子附着至SF6的温度依赖性进行定量分析

描述了新的流动余辉/ Langmuir探针对SF ₆电子附着的研究。热附件速率常数被发现为1.5×10增加^-7厘米^3个小号^-1在200 K至2.3×10 ^-7厘米^3个小号^-1在300K附速率常数在200-700 K的范围（从目前的工作和文献），以及对附件横截面的早期测量，就电子和核贡献进行了分析。后者表明从SF ₆到SF ₆的途中只有很小的核屏障（约20 meV）^-必须克服。分析表明，不仅要考虑s波，还要考虑更高的分波。同样，中性目标的有限大小效应也以不可忽略的方式起作用。