MoO_X is commonly considered to be a high work-function semiconductor. From x-ray photoelectron spectroscopy and photo-electrochemical analysis, it is shown that MoO_X can be considered as an effective hole transfer layer for the GaP-based device. Specifically, in the absence of carbon contamination using an ion beam cleaning step, the oxygen vacancy derived defect band located inside the bandgap becomes the main charge transfer mechanism. We demonstrate, for the first time, a device with a MoO_X/GaP junction that functions as an unbiased photo-charging cell for the redox flow battery system with AQS/AQSH₂∥I⁻/I₃⁻ redox couples. This work has important implications toward enabling MoO_X applications beyond the conventional solar cells, including electrochemical energy storage and chemical conversion systems.

中文翻译：

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在MoOX / GaP接口上量身定制的能级对准，用于太阳能驱动的氧化还原液流电池应用

MoO _X通常被认为是高功函数半导体。从X射线光电子能谱和光电化学分析可以看出，MoO _X可以被视为GaP基器件的有效空穴传输层。具体地，在不存在使用离子束清洁步骤的碳污染的情况下，位于带隙内部的源自氧空位的缺陷带成为主要的电荷转移机制。我们表明，在第一次，具有的MoO的装置_X /间隙连接，其功能如同所述的氧化还原液流电池系统与AQS / AQSH无偏光充电电池₂ ∥I ^- / I ₃ ^-氧化还原夫妇。这项工作对实现MoO _X超越常规太阳能电池的应用具有重要意义，包括电化学能量存储和化学转化系统。