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MoS2 Monolayers on Au Nanodot Arrays: Surface Plasmon, Local Strain, and Interfacial Electronic Interaction
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2020-03-30 , DOI: 10.1021/acs.jpclett.0c00691
Eunah Kim 1 , Chanwoo Lee 2 , Jungeun Song 1 , Soyeong Kwon 1 , Bora Kim 1 , Dae Hyun Kim , Tae Joo Park , Mun Seok Jeong 2 , Dong-Wook Kim 1
Affiliation  

Metal and transition-metal dichalcogenide (TMD) hybrid systems have been attracting growing research attention because exciton–plasmon coupling is a desirable means of tuning the physical properties of TMD materials. Competing effects of metal nanostructures, such as the local electromagnetic field enhancement and luminescence quenching, affect the photoluminescence (PL) characteristics of metal/TMD nanostructures. In this study, we prepared TMD MoS2 monolayers on hexagonal arrays of Au nanodots and investigated their physical properties by micro-PL and surface photovoltage (SPV) measurements. MoS2 monolayers on bare Au nanodots exhibited higher PL intensities than those of MoS2 monolayers on 5-nm-thick Al2O3-coated Au nanodots. The Al2O3 spacer layer blocked charge transfer at the Au/MoS2 interface but allowed the transfer of mechanical strain to the MoS2 monolayers on the nanodots. The SPV mapping results revealed not only the electron-transfer behavior at the Au/MoS2 contacts but also the lateral drift of charge carriers at the MoS2 surface under light illumination, which corresponds to nonradiative relaxation processes of the photogenerated excitons.

中文翻译:

Au纳米点阵列上的MoS 2单层:表面等离激元,局部应变和界面电子相互作用

金属和过渡金属二硫化氢(TMD)混合系统已经引起了越来越多的研究关注,因为激子-等离子体耦合是调节TMD材料物理性能的理想方法。金属纳米结构的竞争效应,例如局部电磁场增强和发光猝灭,会影响金属/ TMD纳米结构的光致发光(PL)特性。在这项研究中,我们在Au纳米点的六边形阵列上制备了TMD MoS 2单层,并通过micro-PL和表面光电压(SPV)测量研究了它们的物理性质。的MoS 2米在裸露的Au的纳米点的单层表现出更高的PL强度比的MoS的2个单层对5-nm厚的Al 2 ö 3涂层的金纳米点。Al 2 O 3间隔层阻止了Au / MoS 2界面处的电荷转移,但允许将机械应变转移至纳米点上的MoS 2单层。SPV映射结果不仅揭示了Au / MoS 2接触处的电子转移行为,而且还揭示了在光照下MoS 2表面上载流子的横向漂移,这与光生激子的非辐射弛豫过程相对应。
更新日期:2020-04-24
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