This study presents experimental data of the interactions and reactions that occur during the early stages of the growth of ZnO on graphene supported on polycrystalline copper and the subsequent changes on the electronic properties of the graphene. The combination of substrate, graphene, and intercalated species (such as oxygen and water molecules) between graphene and copper due to air exposure, together to the evaporation of metallic zinc under oxygen atmosphere, induces the electronic decoupling of the graphene from copper by the formation of a nanometric layer of copper oxide. In particular, the final stage consists in the formation of a complex interface formed by ZnO/ZnO_1−x/Zn/G/Cu₂O/Cu. The role of each actor is discussed in terms of a galvanic corrosion reaction of the metallic substrate where the graphene is the cathode and the initial deposition of metallic zinc accelerates the kinetics of this reaction, after which ZnO grows on the metallic zinc initially deposited. In this manner, the electronic properties of graphene can be engineered by the combination and interrelation of substrates, environment, and new‐deposited materials, revealing a more complex and realistic picture for real fabrication processes. These results may help to improve the real applicability of graphene in mass production devices.

中文翻译：

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ZnO沉积引起的石墨烯与铜的电子解偶联：复杂的底物/石墨烯/沉积/环境相互作用

这项研究提供了在多晶铜上负载的石墨烯上ZnO生长的早期阶段发生的相互作用和反应的实验数据，以及随后石墨烯电子性质的变化。由于暴露于空气中，石墨烯和铜之间的基质，石墨烯和插层物质（例如氧气和水分子）的结合，再加上氧气气氛下金属锌的蒸发，导致石墨烯与铜形成电子解偶联纳米氧化铜层。特别地，最后阶段在于形成由ZnO / ZnO _{1- x} / Zn / G / Cu ₂形成的复合界面。O /铜 根据金属衬底的电化腐蚀反应（其中石墨烯是阴极，金属锌的初始沉积促进了该反应的动力学）讨论了每个演员的作用，此后ZnO在最初沉积的金属锌上生长。通过这种方式，可以通过基板，环境和新沉积材料的组合和相互关系来设计石墨烯的电子特性，从而为实际制造工艺揭示更复杂和逼真的图像。这些结果可能有助于改善石墨烯在大规模生产装置中的实际适用性。