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External‐Field‐Free Spin Hall Switching of Perpendicular Magnetic Nanopillar with a Dipole‐Coupled Composite Structure
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-03-29 , DOI: 10.1002/aelm.201901368 Zhengyang Zhao 1 , Angeline K. Smith 1 , Mahdi Jamali 1 , Jian‐Ping Wang 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-03-29 , DOI: 10.1002/aelm.201901368 Zhengyang Zhao 1 , Angeline K. Smith 1 , Mahdi Jamali 1 , Jian‐Ping Wang 1
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Spin Hall effect (SHE)‐induced reversal of perpendicular magnetization has attracted significant interest, due to its potential for low‐power memory and logic devices. However, the switching requires an assisted in‐plane magnetic field, which hampers its practical applications. Here, a new approach for external‐field‐free spin Hall switching of a perpendicular nanomagnet is introduced. This approach utilizes a local dipolar field arising from an in‐plane biasing layer to assist the switching. Robust switching of a 285 × 95 nm2 perpendicular CoFeB nanomagnet is demonstrated in the absence of any external magnetic field. Micromagnetic simulation is performed to illustrate the magnetic dynamics of the switching process. Large in‐plane compensation field of 135 Oe is obtained in the composite nanodevices, reflecting a strong symmetry‐breaking behavior. Compared with other proposed methods for external‐field‐free spin Hall switching, the dipole‐coupled composite structure is compatible with a wide range of spin Hall systems and perpendicular magnetic tunnel junctions, paving a way towards practical spin–orbit torque‐based memory and logic applications.
中文翻译：
具有偶极耦合复合结构的垂直磁性纳米柱的无外场自旋霍尔开关
自旋霍尔效应（SHE）引起的垂直磁化反转引起了人们极大的兴趣，因为它有潜力用于低功耗存储器和逻辑器件。但是，切换需要辅助的面内磁场，这会妨碍其实际应用。在此，介绍了一种用于垂直纳米磁体的无外场自旋霍尔开关的新方法。这种方法利用了平面内偏置层产生的局部偶极场来辅助切换。285×95 nm 2的可靠切换在没有任何外部磁场的情况下证明了垂直的CoFeB纳米磁铁。进行微磁仿真以说明开关过程的磁动力学。在复合纳米器件中获得了135 Oe的较大的平面内补偿场，这反映了强烈的对称性破坏行为。与其他建议的无外场自旋霍尔开关方法相比，偶极耦合复合结构可与多种自旋霍尔系统和垂直磁隧道结兼容，从而为实际的基于自旋轨道转矩的存储和逻辑应用程序。
更新日期：2020-03-29
中文翻译：
具有偶极耦合复合结构的垂直磁性纳米柱的无外场自旋霍尔开关
自旋霍尔效应（SHE）引起的垂直磁化反转引起了人们极大的兴趣，因为它有潜力用于低功耗存储器和逻辑器件。但是，切换需要辅助的面内磁场，这会妨碍其实际应用。在此，介绍了一种用于垂直纳米磁体的无外场自旋霍尔开关的新方法。这种方法利用了平面内偏置层产生的局部偶极场来辅助切换。285×95 nm 2的可靠切换在没有任何外部磁场的情况下证明了垂直的CoFeB纳米磁铁。进行微磁仿真以说明开关过程的磁动力学。在复合纳米器件中获得了135 Oe的较大的平面内补偿场，这反映了强烈的对称性破坏行为。与其他建议的无外场自旋霍尔开关方法相比，偶极耦合复合结构可与多种自旋霍尔系统和垂直磁隧道结兼容，从而为实际的基于自旋轨道转矩的存储和逻辑应用程序。
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