当前位置: X-MOL 学术J. Nanopart. Res. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Hybrid P3HT: PCBM/GaN nanowire/Si cascade heterojunction for photovoltaic application
Journal of Nanoparticle Research ( IF 2.1 ) Pub Date : 2020-03-29 , DOI: 10.1007/s11051-020-04797-8
Giorgi Tchutchulashvili , Krzysztof P. Korona , Wojciech Mech , Sergij Chusnutdinow , Marta Sobanska , Kamil Klosek , Zbigniew R. Zytkiewicz , Wojciech Sadowski

Poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) are commonly used for the fabrication of organic photovoltaics (OPV). Efficiency limitations of OPVs could be circumvented by incorporation of inorganic nanostructures into organic blends. Again, integration of organic solar cells with well-developed silicon photovoltaic technology is ultimately desirable. In the present work, GaN nanowires with diameters of 25–50 nm and two lengths (200 and 500 nm) have been grown using molecular beam epitaxy technique. Solar-grade monocrystalline silicon wafers were used as substrates for nanowire synthesis. GaN nanostructures were incorporated into P3HT:PCBM photoactive layer in order to facilitate charge transfer between P3HT:PCBM and Si. Samples with and without nanowires were compared. Addition of nanowires led to the improvement in photovoltaic performance. Open circuit voltage has risen by 72% and short circuit current density by 200%. Series resistance has decreased 50 times, and power conversion efficiency has risen 20.7 times. Additional maxima are found in photocurrent spectrum corresponding to carriers being generated near GaN absorption edge. Moreover, external quantum efficiency peaks near GaN absorption edge, indicating the formation of current transfer channel via P3HT/GaN/Si cascade heterojunction. Mechanism explaining source of abovementioned improvement is proposed.



中文翻译:

混合P3HT:用于光伏应用的PCBM / GaN纳米线/ Si级联异质结

聚(3-己基噻吩)(P3HT)和苯基-C61丁酸甲酯(PCBM)通常用于制造有机光伏(OPV)。可以通过将无机纳米结构掺入有机混合物中来规避OPV的效率限制。同样,最终需要将有机太阳能电池与发达的硅光伏技术集成在一起。在目前的工作中,已经使用分子束外延技术生长了直径为25–50 nm且有两种长度(200和500 nm)的GaN纳米线。太阳能级单晶硅晶片用作纳米线合成的衬底。GaN纳米结构被并入P3HT:PCBM光敏层中,以促进P3HT:PCBM和Si之间的电荷转移。比较具有和不具有纳米线的样品。纳米线的添加导致光伏性能的提高。开路电压上升了72%,短路电流密度上升了200%。串联电阻降低了50倍,功率转换效率提高了20.7倍。在光电流光谱中发现了其他最大值,对应于在GaN吸收边缘附近生成的载流子。此外,外部量子效率在GaN吸收边缘附近达到峰值,表明通过P3HT / GaN / Si级联异质结形成了电流传输通道。提出了解释上述改进的来源的机制。在光电流光谱中发现了其他最大值,对应于在GaN吸收边缘附近生成的载流子。此外,外部量子效率在GaN吸收边缘附近达到峰值,表明通过P3HT / GaN / Si级联异质结形成了电流传输通道。提出了解释上述改进的来源的机制。在光电流光谱中发现了其他最大值,对应于在GaN吸收边缘附近生成的载流子。此外,外部量子效率在GaN吸收边缘附近达到峰值,表明通过P3HT / GaN / Si级联异质结形成了电流传输通道。提出了解释上述改进的来源的机制。

更新日期:2020-04-21
down
wechat
bug