Abstract We in detail investigated the effect of growth time on InAs nanowires (NWs) grown on Si substrates by metal-organic chemical vapor deposition. It is found that the axial growth of InAs NWs is nonlinear and shows different trends with different NW diameters. Thin NWs grow faster than thick NWs in length, and the radius of both thin and thick NWs have no dependence on growth time. Based on self-catalyzed growth mechanism, we established a kinetic growth process to simulate the growth of InAs NWs on Si. We analyzed some dependences, including length-time, diameter-time and length-diameter dependences. Calculations are in good agreements with experimental ones. It indicates that growth saturation and growth rates of NWs are determined by diffusion length of In adatoms, initial diameter of seed particles and the amount of adatoms per unit area.

中文翻译：

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生长时间对自催化InAs纳米线影响的理论和实验研究

摘要 我们详细研究了生长时间对通过金属有机化学气相沉积在 Si 衬底上生长的 InAs 纳米线 (NW) 的影响。发现 InAs NW 的轴向生长是非线性的，并且随着 NW 直径的不同表现出不同的趋势。薄 NWs 在长度上比厚 NWs 生长得更快，并且薄和厚 NWs 的半径都与生长时间无关。基于自催化生长机制，我们建立了一个动力学生长过程来模拟 InAs NWs 在 Si 上的生长。我们分析了一些依赖性，包括长度-时间、直径-时间和长度-直径依赖性。计算结果与实验结果吻合良好。这表明NWs的生长饱和度和生长速率由In吸附原子的扩散长度、种子颗粒的初始直径和单位面积吸附原子的数量决定。