Abstract Reversible structural changes of As-rich As–Se nanolayers occurring during in situ thermal annealing and above-bandgap laser illumination were studied by synchrotron radiation photoelectron spectroscopy. It was found that the first thermal annealing of As56Se44 nanolayers led to a decrease of the concentration of As that can be connected with evaporation of more volatile As-rich fractions from the surface. This process is accompanied by structural rearrangements in the nanolayers. In situ green laser illumination of annealed samples causes an increase in the concentration of homopolar As–As bonds associated with As-Se2As s.u., while the opposite effect was detected during further thermal treatment. These processes appeared to be reversible for three sequences of annealing and illumination. The observed effect of the reversible photoinduced structural modification is discussed in detail, and possible applications as an active optical medium for photonics are proposed.

中文翻译：

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用于活性光子介质的富砷纳米层表面的可逆激光辅助结构改性

摘要 通过同步辐射光电子能谱研究了在原位热退火和带隙以上激光照射期间发生的富砷 As-Se 纳米层的可逆结构变化。发现 As56Se44 纳米层的第一次热退火导致 As 浓度降低，这可能与更易挥发的富含 As 部分从表面蒸发有关。这个过程伴随着纳米层的结构重排。退火样品的原位绿色激光照射导致与 As-Se2As su 相关的单极 As-As 键的浓度增加，而在进一步热处理过程中检测到相反的效果。对于三个退火和照明序列，这些过程似乎是可逆的。