Abstract The control of defect multiplication in the upper part of seed-assisted multicrystalline silicon (SAMC-Si), also called as high-performance multi-crystalline silicon, has become crucial for the further improvement of multicrystalline silicon (mc-Si) crystal quality. This work investigates the impact of the temperature gradient at solid/liquid interface on the defect multiplication and solar cell performance. To get the in-time temperature gradient at solid/liquid interface, an equation and an experiment method were developed. It is found that the multiplication rate at the upper ingot is strongly relevant to the temperature gradient at solid/liquid interface. After modifying the temperature gradient, the defect density in the upper part of ingot is reduced about 40%, and the solar cell efficiency increases averagely about 0.07%. Finally, the mechanism and control of defect multiplication were discussed.

中文翻译：

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界面温度梯度对晶种辅助多晶硅缺陷倍增的影响

摘要 控制籽晶辅助多晶硅（SAMC-Si）上部缺陷倍增，也称为高性能多晶硅，对于进一步提高多晶硅（mc-Si）晶体质量至关重要。 . 这项工作研究了固/液界面的温度梯度对缺陷倍增和太阳能电池性能的影响。为了得到固/液界面处的实时温度梯度，建立了方程和实验方法。发现上锭的倍增率与固/液界面的温度梯度密切相关。改变温度梯度后，铸锭上部缺陷密度降低约40%，太阳能电池效率平均提高约0.07%。最后，