Abstract The physical vapor deposition method is used to form layers of Al2O3 insulator on carbon enriched (0001)-oriented 6H-SiC substrate at room temperature. The substrate surface and the Al2O3/6H-SiC interface are characterized in situ by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The electron affinity (EA) of the pre-annealed up to 800 °C under ultrahigh vacuum 6H-SiC(0001) surface and the 7 nm thick Al2O3 layer deposited on the substrate amounts to 4.1 eV, and 1.9 eV respectively. The formation of the Al2O3 compound is confirmed by the appropriate binding energies of Al-2p and O-1s core level lines, which are 75.6 eV and 532.3 eV, respectively. The valence band offset (VBO) of the Al2O3/6H-SiC interface is found to be −3.2 eV and the conduction band offset is calculated to be 0.7 eV.

中文翻译：

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Al2O3 在富碳 6H-SiC(0001) 上的界面形成：光电子能谱研究

摘要 采用物理气相沉积法在室温下在富碳(0001)取向的6H-SiC衬底上形成Al2O3绝缘体层。衬底表面和 Al2O3/6H-SiC 界面通过 X 射线光电子能谱 (XPS) 和紫外光电子能谱 (UPS) 原位表征。在超高真空 6H-SiC(0001) 表面和 7 nm 厚的 Al2O3 层下预退火至 800°C 的电子亲和力 (EA) 分别为 4.1 eV 和 1.9 eV。Al2O3 化合物的形成由 Al-2p 和 O-1s 核心能级线的适当结合能证实，分别为 75.6 eV 和 532.3 eV。发现 Al2O3/6H-SiC 界面的价带偏移 (VBO) 为 -3.2 eV，计算得出导带偏移为 0.7 eV。