Abstract In this work, we prepared TiO2 and Co multilayer thin films via DC magnetron sputtering method on (100) GaAs and (100) Si substrates. The power for each target (TiO2 and Co), deposition time of the layers, and pressure during deposition were kept constant. From XRD, Raman, and IR measurements, the formation of the rutile and triclinic Co phases were identified in the multilayer thin films. An annealing process was carried in situ on all samples and subsequent to the deposition stage during 2 h. The substrate used was GaAs and Si wafer, favoring the formation and growth of the found phases. The diffusion and interdiffusion of the layers in the thin films were determined from Rutherford Backscattering Spectroscopy (RBS). In particular, Co and Ga were observed to associate after the annealing process according to the depth profiles. Due to the interdiffusion layers, the parallel magnetic contribution is not significant in the bilayer. Curves I-V of the Co/TiO2 bilayer showed the presence of resistive switching, according to the bipolar resistive. A correlation between synthesis parameters and the physical properties of the multilayers is presented.

中文翻译：

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室温下通过直流磁控溅射制备 TiO2 和 Co 多层薄膜：界面特性

摘要 在这项工作中，我们通过直流磁控溅射法在 (100) GaAs 和 (100) Si 衬底上制备了 TiO2 和 Co 多层薄膜。每个靶（TiO2 和 Co）的功率、层的沉积时间和沉积过程中的压力保持恒定。通过 XRD、拉曼和红外测量，在多层薄膜中确定了金红石和三斜 Co 相的形成。对所有样品进行原位退火过程，然后在 2 小时内进行沉积阶段。使用的衬底是 GaAs 和 Si 晶片，有利于发现相的形成和生长。薄膜中各层的扩散和相互扩散由卢瑟福背散射光谱 (RBS) 确定。特别是，根据深度分布，在退火过程后观察到 Co 和 Ga 缔合。由于相互扩散层，双层中的平行磁贡献不显着。根据双极电阻，Co/TiO 2 双层的曲线IV显示存在电阻转换。提出了合成参数和多层物理特性之间的相关性。