Abstract A deep ultraviolet light-emitting diode (DUV LED) consisting of a specifically designed intermediate p-type region involving a superlattice quaternary nitride alloy has been proposed. The light output power of the proposed structure has been found significantly large; around 28.30 times high in comparison to the conventional structure, at the current density of 200 A/cm2. The maximum internal quantum efficiency of the proposed structure is 153.63% higher compared to the conventional one. Moreover, the efficiency droop has been reduced by 99.08%. Absence of abrupt potential barrier owing to the strain compensation provided by the superlattice p-AlInGaN layer offers an attractive solution for enhancing the hole injection into the active region leading to the improvement in performance of DUV LED.

中文翻译：

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基于 AlInGaN 的超晶格 p 区可提高深紫外 LED 的性能

摘要 已经提出了一种深紫外发光二极管 (DUV LED)，它由一个特别设计的中间 p 型区域组成，其中涉及超晶格四元氮化物合金。已发现所提出结构的光输出功率非常大；与传统结构相比，在 200 A/cm2 的电流密度下高约 28.30 倍。与传统结构相比，所提出结构的最大内量子效率高出 153.63%。此外，效率下降减少了99.08%。由于超晶格 p-AlInGaN 层提供的应变补偿，没有突然的势垒，这为增强有源区的空穴注入提供了一种有吸引力的解决方案，从而提高了 DUV LED 的性能。